Study of amorphous thin films of Ge-As-Se system using laser desorption ionisation time-of-flight mass spectrometry

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F14%3A00073526" target="_blank" >RIV/00216224:14310/14:00073526 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

čeština

Název v původním jazyce

Study of amorphous thin films of Ge-As-Se system using laser desorption ionisation time-of-flight mass spectrometry

Popis výsledku v původním jazyce

Chalcogenide amorphous thin films represent one of the important materials with extensive applications. High refractive indices, good transparency in the IR spectral region, and photoinduced changes of the optical properties can be achieved and used forintegrated optical devices, fully optical signal processing, optical circuits and, eventually for optical computing. The Ge-As-Se system belongs to group of glasses with large glass-forming region as well as tuning their photosensitivity/photostability.Laser desorption ionization (LDI) time-of-flight mass spectrometry (TOF MS) was proved to be highly useful for solid materials analysis, cf. for example. LDI TOF MS was applied here to analyze manufactured Ge-As-Se amorphous thin films fabricated by pulsed laser deposition technique. Mass spectra of the films are quite complex with severe clusters overlap. Stoichiometry of the GemAsnSeo clusters was determined via analysis of isotopic envelopes and computer modeling.

Název v anglickém jazyce

Study of amorphous thin films of Ge-As-Se system using laser desorption ionisation time-of-flight mass spectrometry

Popis výsledku anglicky

Chalcogenide amorphous thin films represent one of the important materials with extensive applications. High refractive indices, good transparency in the IR spectral region, and photoinduced changes of the optical properties can be achieved and used forintegrated optical devices, fully optical signal processing, optical circuits and, eventually for optical computing. The Ge-As-Se system belongs to group of glasses with large glass-forming region as well as tuning their photosensitivity/photostability.Laser desorption ionization (LDI) time-of-flight mass spectrometry (TOF MS) was proved to be highly useful for solid materials analysis, cf. for example. LDI TOF MS was applied here to analyze manufactured Ge-As-Se amorphous thin films fabricated by pulsed laser deposition technique. Mass spectra of the films are quite complex with severe clusters overlap. Stoichiometry of the GemAsnSeo clusters was determined via analysis of isotopic envelopes and computer modeling.

Druh

O - Ostatní výsledky

CEP obor

CB - Analytická chemie, separace

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů