Study of Ge-As-Se chalcogenide glasses using laser desorption ionisation time-of-flight mass spectrometry

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F13%3A00069634" target="_blank" >RIV/00216224:14310/13:00069634 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Study of Ge-As-Se chalcogenide glasses using laser desorption ionisation time-of-flight mass spectrometry

Popis výsledku v původním jazyce

Chalcogenide glasses are advanced materials with many applications in the field of infrared optics and electronics. The Ge-As-Se system belongs to group of glasses which are distinguished from other materials by large glass-forming region as well as tuning their photosensitivity/photostability. The glasses and amorphous thin films from Ge-As-Se system were already studied via several methods, however the plasma chemistry which is of high importance for thin films growth via plasma techniques is not understood yet. Therefore, in this work Ge-As-Se glasses were manufactured and their interaction with high energy laser pulses was studied using laser desorption ionisation time-of-flight mass spectrometry. It was shown in previous papers that clusters ablated from the solid glass posses to a certain extend part of the original structure and thus information about the structural patterns of solid glass can be obtained. The spectra are quite complex and often result of several clusters overla

Název v anglickém jazyce

Study of Ge-As-Se chalcogenide glasses using laser desorption ionisation time-of-flight mass spectrometry

Popis výsledku anglicky

Chalcogenide glasses are advanced materials with many applications in the field of infrared optics and electronics. The Ge-As-Se system belongs to group of glasses which are distinguished from other materials by large glass-forming region as well as tuning their photosensitivity/photostability. The glasses and amorphous thin films from Ge-As-Se system were already studied via several methods, however the plasma chemistry which is of high importance for thin films growth via plasma techniques is not understood yet. Therefore, in this work Ge-As-Se glasses were manufactured and their interaction with high energy laser pulses was studied using laser desorption ionisation time-of-flight mass spectrometry. It was shown in previous papers that clusters ablated from the solid glass posses to a certain extend part of the original structure and thus information about the structural patterns of solid glass can be obtained. The spectra are quite complex and often result of several clusters overla

Druh

O - Ostatní výsledky

CEP obor

CB - Analytická chemie, separace

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0086" target="_blank" >ED2.1.00/03.0086: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů