Germanium-antimony-selenium-tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F22%3A39919346" target="_blank" >RIV/00216275:25310/22:39919346 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/22:00125350

Výsledek na webu

<a href="https://ceramics.onlinelibrary.wiley.com/doi/10.1111/jace.18228" target="_blank" >https://ceramics.onlinelibrary.wiley.com/doi/10.1111/jace.18228</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1111/jace.18228" target="_blank" >10.1111/jace.18228</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Germanium-antimony-selenium-tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Popis výsledku v původním jazyce

Quaternary germanium-antimony-selenium-tellurium (Ge-Sb-Se-Te) thin films deposited from Ge19.4Sb16.7Se63.9-xTex (x = 5, 10, 15, and 20) glass-ceramics targets by radio frequency magnetron sputtering were studied using laser ablation quadrupole ion trap time of flight mass spectrometry. Binary, ternary, and quaternary GeaSbbSecTed clusters were formed and their stoichiometry was determined. By comparison of the clusters obtained from quaternary Ge-Sb-Se-Te thin films and those from ternary Ge-Sb-Te materials, we found that Ge-Te species are not detected from the quaternary system. Furthermore, Ge-Se and Se-Te species are missing in mass spectra generated from Ge-Sb-Se-Te thin films. From the Ge-Sb-Se-Te thin films, 16 clusters were detected while ternary Ge-Sb-Se glasses yielded 26 species. This might be considered as a signal of higher stability of Ge-Sb-Se-Te thin films which is increasing with a higher content of Te. The missing (Se-2(+), GeaSb+ (a = 1-4), and GeSec+ (c = 1, 2)) and new (Ge+ and SbbTe+ (b = 1-3)) clusters may indicate that some of the structural features of the films (Ge2Se6/2 and Se2Sb-SbSe2) were replaced by (GeSe4-x,Te-x and SbSe3-xTex) ones. In addition, when comparing the stoichiometry of clusters formed from Ge-Sb-Se-Te thin films with those from the mixtures of the elements, only Sb-3(+) and SbSe+ were observed in both cases. The knowledge gained concerning clusters stoichiometry contributes to the elucidation of the processes proceeding during plasma formation used for the chalcogenide thin films deposition.

Název v anglickém jazyce

Germanium-antimony-selenium-tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Popis výsledku anglicky

Quaternary germanium-antimony-selenium-tellurium (Ge-Sb-Se-Te) thin films deposited from Ge19.4Sb16.7Se63.9-xTex (x = 5, 10, 15, and 20) glass-ceramics targets by radio frequency magnetron sputtering were studied using laser ablation quadrupole ion trap time of flight mass spectrometry. Binary, ternary, and quaternary GeaSbbSecTed clusters were formed and their stoichiometry was determined. By comparison of the clusters obtained from quaternary Ge-Sb-Se-Te thin films and those from ternary Ge-Sb-Te materials, we found that Ge-Te species are not detected from the quaternary system. Furthermore, Ge-Se and Se-Te species are missing in mass spectra generated from Ge-Sb-Se-Te thin films. From the Ge-Sb-Se-Te thin films, 16 clusters were detected while ternary Ge-Sb-Se glasses yielded 26 species. This might be considered as a signal of higher stability of Ge-Sb-Se-Te thin films which is increasing with a higher content of Te. The missing (Se-2(+), GeaSb+ (a = 1-4), and GeSec+ (c = 1, 2)) and new (Ge+ and SbbTe+ (b = 1-3)) clusters may indicate that some of the structural features of the films (Ge2Se6/2 and Se2Sb-SbSe2) were replaced by (GeSe4-x,Te-x and SbSe3-xTex) ones. In addition, when comparing the stoichiometry of clusters formed from Ge-Sb-Se-Te thin films with those from the mixtures of the elements, only Sb-3(+) and SbSe+ were observed in both cases. The knowledge gained concerning clusters stoichiometry contributes to the elucidation of the processes proceeding during plasma formation used for the chalcogenide thin films deposition.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of the American Ceramic Society

ISSN

0002-7820

e-ISSN

1551-2916

Svazek periodika

105

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

1992-2000

Kód UT WoS článku

000722554000001

EID výsledku v databázi Scopus

2-s2.0-85119868340