Laser ablation of Ga-Sb-Te thin films monitored with quadrupole ion trap time-of-flight mass spectrometry

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F21%3A39917804" target="_blank" >RIV/00216275:25310/21:39917804 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/21:00122413

Výsledek na webu

<a href="https://ceramics.onlinelibrary.wiley.com/doi/10.1111/jace.18021" target="_blank" >https://ceramics.onlinelibrary.wiley.com/doi/10.1111/jace.18021</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1111/jace.18021" target="_blank" >10.1111/jace.18021</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Laser ablation of Ga-Sb-Te thin films monitored with quadrupole ion trap time-of-flight mass spectrometry

Popis výsledku v původním jazyce

Laser ablation of Ga-Sb-Te chalcogenide thin films prepared by radiofrequency magnetron co-sputtering was monitored with quadrupole ion trap time-of-flight mass spectrometry (QIT-TOF-MS). The mass spectra of 11 thin films of various compositions (Ga: 0-53.1, Sb: 0-52.0, and Te: 0-100.0 at. %) were recorded. Several series of unary (Ga-x, Sb-y, and Te-z), binary (GaxSby, GaxTez, and SbyTez), and ternary GaxSbyTez clusters were identified in both positive and negative ion modes. Stoichiometry of observed clusters was determined. Up to 18 binary clusters (positively and negatively charged) were detected for thin film with low Sb content of 6.5 at. %. The highest number (4) of ternary clusters was observed for thin film with high Te content of 66.7 at. %. The number of generated clusters and their peaks intensity varied according to the chemical composition of thin films. Altogether, 41 clusters were detected. The laser ablation monitoring shows laser-induced fragmentation of thin film structure. The relation of clusters stoichiometries to the chemical composition of thin films is discussed. The fragmentation can be diminished by covering a surface of thin films with paraffin&apos;s, glycerol, or trehalose sugar thin layers. The stoichiometry of generated clusters shows partial structural characterization of thin films.

Název v anglickém jazyce

Laser ablation of Ga-Sb-Te thin films monitored with quadrupole ion trap time-of-flight mass spectrometry

Popis výsledku anglicky

Laser ablation of Ga-Sb-Te chalcogenide thin films prepared by radiofrequency magnetron co-sputtering was monitored with quadrupole ion trap time-of-flight mass spectrometry (QIT-TOF-MS). The mass spectra of 11 thin films of various compositions (Ga: 0-53.1, Sb: 0-52.0, and Te: 0-100.0 at. %) were recorded. Several series of unary (Ga-x, Sb-y, and Te-z), binary (GaxSby, GaxTez, and SbyTez), and ternary GaxSbyTez clusters were identified in both positive and negative ion modes. Stoichiometry of observed clusters was determined. Up to 18 binary clusters (positively and negatively charged) were detected for thin film with low Sb content of 6.5 at. %. The highest number (4) of ternary clusters was observed for thin film with high Te content of 66.7 at. %. The number of generated clusters and their peaks intensity varied according to the chemical composition of thin films. Altogether, 41 clusters were detected. The laser ablation monitoring shows laser-induced fragmentation of thin film structure. The relation of clusters stoichiometries to the chemical composition of thin films is discussed. The fragmentation can be diminished by covering a surface of thin films with paraffin&apos;s, glycerol, or trehalose sugar thin layers. The stoichiometry of generated clusters shows partial structural characterization of thin films.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/GA19-24516S" target="_blank" >GA19-24516S: Chalkogenidové tenké vrstvy dopované ionty vzácných zemin pro detekci plynů ve střední infračervené oblasti spektra</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of the American Ceramic Society

ISSN

0002-7820

e-ISSN

—

Svazek periodika

104

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

6643-6652

Kód UT WoS článku

000676143400001

EID výsledku v databázi Scopus

2-s2.0-85110994729