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Silicon Oxide Films: Plasma Assisted Formation of Nanostructures from Glass to Organic Polymers

Identifikátory výsledku

  • Kód výsledku v IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F16%3A00097404" target="_blank" >RIV/00216224:14310/16:00097404 - isvavai.cz</a>

  • Výsledek na webu

  • DOI - Digital Object Identifier

Alternativní jazyky

  • Jazyk výsledku

    angličtina

  • Název v původním jazyce

    Silicon Oxide Films: Plasma Assisted Formation of Nanostructures from Glass to Organic Polymers

  • Popis výsledku v původním jazyce

    Thin silicon oxide films produced by means of plasma enhanced deposition techniques cover a large area of applications with a long industrial tradition. It is long-recognized that the chemical composition, physical properties and particularly the functionalisation of SiOx films can be adjusted in a wide range by choosing the appropriate plasma conditions for the deposition process. For PECVD, the proper choice of the silicon-organic molecule as thin film precursor is also substantial. Next to the production of amorphous SiO2films by PVD for optical coatings, also SiOx films by PECVD are known that mimic the functionality of a glass surface. Prominent examples include films for corrosion protection, as passivation and insulation layer, and for permeation barrier coatings. Here, dense, pin-hole free films are required that are usually characterized by a stoichiometry close to x=2, with low carbon content (below 5%). With increasing polymeric character and depending on the degree of cross-linking the films become attractive for applications such as adhesion promoting interfaces in multilayer systems, for the integration of catalysts into surfaces or as selective absorber in sensor applications. For these purposes, films with micro- and nano-porous morphologies are preferred.

  • Název v anglickém jazyce

    Silicon Oxide Films: Plasma Assisted Formation of Nanostructures from Glass to Organic Polymers

  • Popis výsledku anglicky

    Thin silicon oxide films produced by means of plasma enhanced deposition techniques cover a large area of applications with a long industrial tradition. It is long-recognized that the chemical composition, physical properties and particularly the functionalisation of SiOx films can be adjusted in a wide range by choosing the appropriate plasma conditions for the deposition process. For PECVD, the proper choice of the silicon-organic molecule as thin film precursor is also substantial. Next to the production of amorphous SiO2films by PVD for optical coatings, also SiOx films by PECVD are known that mimic the functionality of a glass surface. Prominent examples include films for corrosion protection, as passivation and insulation layer, and for permeation barrier coatings. Here, dense, pin-hole free films are required that are usually characterized by a stoichiometry close to x=2, with low carbon content (below 5%). With increasing polymeric character and depending on the degree of cross-linking the films become attractive for applications such as adhesion promoting interfaces in multilayer systems, for the integration of catalysts into surfaces or as selective absorber in sensor applications. For these purposes, films with micro- and nano-porous morphologies are preferred.

Klasifikace

  • Druh

    O - Ostatní výsledky

  • CEP obor

  • OECD FORD obor

    10305 - Fluids and plasma physics (including surface physics)

Návaznosti výsledku

  • Projekt

    Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

  • Návaznosti

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Ostatní

  • Rok uplatnění

    2016

  • Kód důvěrnosti údajů

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů