Temperature-dependent dispersion model of float zone crystalline silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F17%3A00094432" target="_blank" >RIV/00216224:14310/17:00094432 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0169433217303720" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0169433217303720</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2017.02.021" target="_blank" >10.1016/j.apsusc.2017.02.021</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature-dependent dispersion model of float zone crystalline silicon

Popis výsledku v původním jazyce

In this paper, we present the temperature dependent dispersion model of float zone crystalline silicon. The theoretical background for valence electronic excitations is introduced in the theoretical part of this paper. This model is based on application of sum rules and parametrization of transition strength functions corresponding to the individual elemental phonon and electronic excitations. The parameters of the model are determined by fitting ellipsometric and spectrophotometric experimental data in the spectral range from far infrared (70 cm-1) to extreme ultraviolet (40 eV). The ellipsometric data were measured in the temperature range 5-700 K. The excitations of the valence electrons to the conduction band are divided into the indirect and direct electronic transitions. The indirect transitions are modeled by truncated Lorentzian terms, whereas the direct transitions are modeled using Gaussian broadened piecewise smooth functions representing 3D and 2D van Hove singularities modified by excitonic effects. Since the experimental data up to high energies (40 eV) are available, we are able to determine the value of the effective number of valence electrons. The Tauc-Lorentz dispersion model is used for modeling high energy electron excitations. Two slightly different values of the effective number of valence electrons are obtained for the Jellison-Modine (4.51) and Campi-Coriasso (4.37) parametrization. Our goal is to obtain the model of dielectric response of crystalline silicon which depends only on photon energy, temperature and small number of material parameters, e.g. the concentration of substituted carbon and interstitial oxygen. The model presented in this paper is accurate enough to replace tabulated values of c-Si optical constants used in the optical characterization of thin films placed onto silicon substrates. The spectral dependencies of the optical constants obtained in our work are compared to results obtained by other authors.

Název v anglickém jazyce

Temperature-dependent dispersion model of float zone crystalline silicon

Popis výsledku anglicky

In this paper, we present the temperature dependent dispersion model of float zone crystalline silicon. The theoretical background for valence electronic excitations is introduced in the theoretical part of this paper. This model is based on application of sum rules and parametrization of transition strength functions corresponding to the individual elemental phonon and electronic excitations. The parameters of the model are determined by fitting ellipsometric and spectrophotometric experimental data in the spectral range from far infrared (70 cm-1) to extreme ultraviolet (40 eV). The ellipsometric data were measured in the temperature range 5-700 K. The excitations of the valence electrons to the conduction band are divided into the indirect and direct electronic transitions. The indirect transitions are modeled by truncated Lorentzian terms, whereas the direct transitions are modeled using Gaussian broadened piecewise smooth functions representing 3D and 2D van Hove singularities modified by excitonic effects. Since the experimental data up to high energies (40 eV) are available, we are able to determine the value of the effective number of valence electrons. The Tauc-Lorentz dispersion model is used for modeling high energy electron excitations. Two slightly different values of the effective number of valence electrons are obtained for the Jellison-Modine (4.51) and Campi-Coriasso (4.37) parametrization. Our goal is to obtain the model of dielectric response of crystalline silicon which depends only on photon energy, temperature and small number of material parameters, e.g. the concentration of substituted carbon and interstitial oxygen. The model presented in this paper is accurate enough to replace tabulated values of c-Si optical constants used in the optical characterization of thin films placed onto silicon substrates. The spectral dependencies of the optical constants obtained in our work are compared to results obtained by other authors.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

421

Číslo periodika v rámci svazku

November

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

15

Strana od-do

405-419

Kód UT WoS článku

000408756700023

EID výsledku v databázi Scopus

—