Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F17%3A00097198" target="_blank" >RIV/00216224:14310/17:00097198 - isvavai.cz</a>

Výsledek na webu

<a href="https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.045414" target="_blank" >https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.045414</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.96.045414" target="_blank" >10.1103/PhysRevB.96.045414</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect

Popis výsledku v původním jazyce

We show that anisotropic biaxial stress can be used to tune the built-in dipole moment of excitons confined in In(Ga)As quantum dots up to complete erasure of its magnitude and inversion of its sign. We demonstrate that this phenomenon is due to piezoelectricity. We present a model to calculate the applied stress, taking advantage of the so-called piezotronic effect, which produces significant changes in the current-voltage characteristics of the strained diode-membranes containing the quantum dots. Finally, self-consistent k.p calculations reveal that the experimental findings can be only accounted for by the nonlinear piezoelectric effect, whose importance in quantum dot physics has been theoretically recognized although it has proven difficult to single out experimentally.

Název v anglickém jazyce

Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect

Popis výsledku anglicky

We show that anisotropic biaxial stress can be used to tune the built-in dipole moment of excitons confined in In(Ga)As quantum dots up to complete erasure of its magnitude and inversion of its sign. We demonstrate that this phenomenon is due to piezoelectricity. We present a model to calculate the applied stress, taking advantage of the so-called piezotronic effect, which produces significant changes in the current-voltage characteristics of the strained diode-membranes containing the quantum dots. Finally, self-consistent k.p calculations reveal that the experimental findings can be only accounted for by the nonlinear piezoelectric effect, whose importance in quantum dot physics has been theoretically recognized although it has proven difficult to single out experimentally.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LQ1601" target="_blank" >LQ1601: CEITEC 2020</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B

ISSN

2469-9950

e-ISSN

2469-9969

Svazek periodika

96

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

—

Kód UT WoS článku

000405364100006

EID výsledku v databázi Scopus

2-s2.0-85026426853