Atomic layer deposition of nanocrystallite arrays of copper(I) chloride for optoelectronic structures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F17%3A00108725" target="_blank" >RIV/00216224:14310/17:00108725 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s10854-017-6973-8" target="_blank" >https://link.springer.com/article/10.1007/s10854-017-6973-8</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-017-6973-8" target="_blank" >10.1007/s10854-017-6973-8</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Atomic layer deposition of nanocrystallite arrays of copper(I) chloride for optoelectronic structures

Popis výsledku v původním jazyce

Zinc blende structure gamma-copper(I) chloride is a wide bandgap semiconductor with high exciton and biexciton binding energies. gamma-CuCl has applications in UV-wavelength optoelectronic structures which can exploit these characteristics, such as 4-wave mixing and optical bistability. For these purposes, a controllable method of achieving thin films and nanocrystallite arrays is necessary. Atomic layer deposition (ALD) of nanocrystallites and thin films of gamma-CuCl under restricted conditions has previously been demonstrated. This paper greatly extends the previous work and unequivocally confirms that ALD growth takes place over a range of deposition parameters, as characterised by growth saturation with increasing precursor dose, deposition rate independent of temperature and linear growth rate once a complete film has been formed. Arrays of nanocrystallites of different sizes can be controllably deposited by varying the number of ALD cycles within the initial nucleation region. In this region two distinct growth regimes have been observed depending on the length of the post-chloride precursor purge pulse. Long purge time results in retarded nucleation whereas short pulse time shows enhanced nucleation compared to a strictly linear process. The zinc blende gamma-CuCl phase was confirmed with both X-ray analysis and also the signature excitonic Z(1,2) and Z(3) peaks in optical absorption, with no evidence of other impurities. This demonstrates that ALD is a suitable technique for the controllable deposition of thin films and arrays of nanocrystallites of CuCl which may facilitate the use of CuCl in thin film or nanocluster form for further exploration in optoelectronic and photonic applications.

Název v anglickém jazyce

Atomic layer deposition of nanocrystallite arrays of copper(I) chloride for optoelectronic structures

Popis výsledku anglicky

Zinc blende structure gamma-copper(I) chloride is a wide bandgap semiconductor with high exciton and biexciton binding energies. gamma-CuCl has applications in UV-wavelength optoelectronic structures which can exploit these characteristics, such as 4-wave mixing and optical bistability. For these purposes, a controllable method of achieving thin films and nanocrystallite arrays is necessary. Atomic layer deposition (ALD) of nanocrystallites and thin films of gamma-CuCl under restricted conditions has previously been demonstrated. This paper greatly extends the previous work and unequivocally confirms that ALD growth takes place over a range of deposition parameters, as characterised by growth saturation with increasing precursor dose, deposition rate independent of temperature and linear growth rate once a complete film has been formed. Arrays of nanocrystallites of different sizes can be controllably deposited by varying the number of ALD cycles within the initial nucleation region. In this region two distinct growth regimes have been observed depending on the length of the post-chloride precursor purge pulse. Long purge time results in retarded nucleation whereas short pulse time shows enhanced nucleation compared to a strictly linear process. The zinc blende gamma-CuCl phase was confirmed with both X-ray analysis and also the signature excitonic Z(1,2) and Z(3) peaks in optical absorption, with no evidence of other impurities. This demonstrates that ALD is a suitable technique for the controllable deposition of thin films and arrays of nanocrystallites of CuCl which may facilitate the use of CuCl in thin film or nanocluster form for further exploration in optoelectronic and photonic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN

0957-4522

e-ISSN

1573-482X

Svazek periodika

28

Číslo periodika v rámci svazku

16

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

11695-11701

Kód UT WoS článku

000406196200018

EID výsledku v databázi Scopus

2-s2.0-85019552777