Active IrO2 and NiO Thin Films Prepared by Atomic Layer Deposition for Oxygen Evolution Reaction

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F20%3A43933920" target="_blank" >RIV/60461373:22310/20:43933920 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.mdpi.com/2073-4344/10/1/92" target="_blank" >https://www.mdpi.com/2073-4344/10/1/92</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/catal10010092" target="_blank" >10.3390/catal10010092</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Active IrO2 and NiO Thin Films Prepared by Atomic Layer Deposition for Oxygen Evolution Reaction

Popis výsledku v původním jazyce

Atomic layer deposition (ALD) is a special type of chemical vapor deposition (CVD) technique that can grow uniformed thin films on a substrate through alternate self-limiting surface reactions. Recently, the application of these thin film materials to catalytic systems has begun to attract much attention, and the capacity to deposit these catalytic films in a highly controlled manner continues to gain importance. In this study, IrO2 and NiO thin films (approximately 25 to 60 nm) were deposited on industrial Ni expanded mesh as an anode for alkaline water electrolysis. Different ALD operating parameters such as the total number of deposition cycles, sublimation and deposition temperatures, and precursors pulse and purge lengths were varied to determine their effects on the structure and the electrochemical performance of the thin film materials. Results from the electrochemical tests (6 M KOH, 80 degrees C, up to 10 kA/m(2)) showed the catalytic activity of the samples. Oxygen overpotential values (eta O-2) were 20 to 60 mV lower than the bare Ni expanded mesh. In summary, the study has demonstrated the feasibility of using the ALD technique to deposit uniformed and electroactive thin films on industrial metallic substrates as anodes for alkaline water electrolysis.

Název v anglickém jazyce

Active IrO2 and NiO Thin Films Prepared by Atomic Layer Deposition for Oxygen Evolution Reaction

Popis výsledku anglicky

Atomic layer deposition (ALD) is a special type of chemical vapor deposition (CVD) technique that can grow uniformed thin films on a substrate through alternate self-limiting surface reactions. Recently, the application of these thin film materials to catalytic systems has begun to attract much attention, and the capacity to deposit these catalytic films in a highly controlled manner continues to gain importance. In this study, IrO2 and NiO thin films (approximately 25 to 60 nm) were deposited on industrial Ni expanded mesh as an anode for alkaline water electrolysis. Different ALD operating parameters such as the total number of deposition cycles, sublimation and deposition temperatures, and precursors pulse and purge lengths were varied to determine their effects on the structure and the electrochemical performance of the thin film materials. Results from the electrochemical tests (6 M KOH, 80 degrees C, up to 10 kA/m(2)) showed the catalytic activity of the samples. Oxygen overpotential values (eta O-2) were 20 to 60 mV lower than the bare Ni expanded mesh. In summary, the study has demonstrated the feasibility of using the ALD technique to deposit uniformed and electroactive thin films on industrial metallic substrates as anodes for alkaline water electrolysis.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

—

Návaznosti

R - Projekt Ramcoveho programu EK

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Catalysts

ISSN

2073-4344

e-ISSN

2073-4344

Svazek periodika

10

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

13

Strana od-do

nestránkováno

Kód UT WoS článku

000516825000092

EID výsledku v databázi Scopus

2-s2.0-85078262000