Použití tenkovrstevného porézního Al2O3 jako šablony pro tvorbu poravidelně uspořádaných nanostruktur

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F07%3APU69510" target="_blank" >RIV/00216305:26220/07:PU69510 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Using a Porous Alumina Film as a Mask for Formation of Ordered Nanostructures by Deposition Technique

Popis výsledku v původním jazyce

The porous alumina attracts attention because of its self-ordered hexagonal structure. It can be used as a template nanosize structure, for many devices such as magnetic, electronic and optoelectronic. The aim of this method is preparation of the mask for electrodepositing nanowires directly on Si substrate. The presented technique without utilization of high-resolution electron-beam lithographs belongs to low-cost technology in the microelectronic industry. Anodic alumina has been prepared in several electrolytes by the anodization process and the characteristics of pore structures have been studied in different anodizing conditions. The thickness of aluminum film for anodization was 1-2 um. The two methods for deposition of aluminum thin film on Si substrate are thermal evaporating and sputtering. The prepared alumina structures have 15-30 nm pore diameters and 30-110 nm interpore distances. The anodization of thin alumina film deposited on Si substrate is a complicated process in co

Název v anglickém jazyce

Using a Porous Alumina Film as a Mask for Formation of Ordered Nanostructures by Deposition Technique

Popis výsledku anglicky

The porous alumina attracts attention because of its self-ordered hexagonal structure. It can be used as a template nanosize structure, for many devices such as magnetic, electronic and optoelectronic. The aim of this method is preparation of the mask for electrodepositing nanowires directly on Si substrate. The presented technique without utilization of high-resolution electron-beam lithographs belongs to low-cost technology in the microelectronic industry. Anodic alumina has been prepared in several electrolytes by the anodization process and the characteristics of pore structures have been studied in different anodizing conditions. The thickness of aluminum film for anodization was 1-2 um. The two methods for deposition of aluminum thin film on Si substrate are thermal evaporating and sputtering. The prepared alumina structures have 15-30 nm pore diameters and 30-110 nm interpore distances. The anodization of thin alumina film deposited on Si substrate is a complicated process in co

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CG - Elektrochemie

OECD FORD obor

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Projekt

<a href="/cs/project/GP102%2F04%2FP162" target="_blank" >GP102/04/P162: Mikro- a nanostruktury realizované v mikroelektronických technologiích</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2007

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Acta Metallurgica Slovaca

ISSN

1335-1532

e-ISSN

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Svazek periodika

13

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

SK - Slovenská republika

Počet stran výsledku

4

Strana od-do

155-158

Kód UT WoS článku

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EID výsledku v databázi Scopus

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