Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F23%3A00131418" target="_blank" >RIV/00216224:14310/23:00131418 - isvavai.cz</a>

Výsledek na webu

<a href="https://opg.optica.org/ome/fulltext.cfm?uri=ome-13-7-2020&id=532139" target="_blank" >https://opg.optica.org/ome/fulltext.cfm?uri=ome-13-7-2020&id=532139</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1364/OME.493426" target="_blank" >10.1364/OME.493426</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry

Popis výsledku v původním jazyce

Spectroscopic ellipsometry measurements were performed on antiferromagnetic semiconductor CuFeS2 grown via molecular beam epitaxy. UV/Visible and IR ellipsometry data was merged and modeled to derive the dielectric function of CuFeS2 from 30 meV to 4.5 eV. The CuFeS2 samples were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and cross-section scanning electron microscopy (SEM) which gave the crystal quality, surface roughness and sample film thickness. A critical point analysis revealed a direct band gap of 0.76 eV, while modeling gives a carrier concentration of 8 &amp; PLUSMN; 2 x 1019 &amp; SIM;cm-3 and an estimate of the indirect band gap of 0.5 eV. Optically active infrared phonons were observed at 319 cm-1 and 350 cm-1 with significant Raman active modes at 85.8 cm-1, 265 cm-1, 288 cm-1, 318 cm-1 and 377 cm-1. The fitted optical constants were then used to characterize the crystal quality and spatial uniformity.

Název v anglickém jazyce

Dielectric function and band gap determination of single crystal CuFeS2 using FTIR-VIS-UV spectroscopic ellipsometry

Popis výsledku anglicky

Spectroscopic ellipsometry measurements were performed on antiferromagnetic semiconductor CuFeS2 grown via molecular beam epitaxy. UV/Visible and IR ellipsometry data was merged and modeled to derive the dielectric function of CuFeS2 from 30 meV to 4.5 eV. The CuFeS2 samples were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and cross-section scanning electron microscopy (SEM) which gave the crystal quality, surface roughness and sample film thickness. A critical point analysis revealed a direct band gap of 0.76 eV, while modeling gives a carrier concentration of 8 &amp; PLUSMN; 2 x 1019 &amp; SIM;cm-3 and an estimate of the indirect band gap of 0.5 eV. Optically active infrared phonons were observed at 319 cm-1 and 350 cm-1 with significant Raman active modes at 85.8 cm-1, 265 cm-1, 288 cm-1, 318 cm-1 and 377 cm-1. The fitted optical constants were then used to characterize the crystal quality and spatial uniformity.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials Express

ISSN

2159-3930

e-ISSN

—

Svazek periodika

13

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

16

Strana od-do

2020-2035

Kód UT WoS článku

001033609700001

EID výsledku v databázi Scopus

2-s2.0-85187544496