Laser-ablated Gd2O3 thin films: potential ferromagnetic semiconductors?

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F25%3A00141799" target="_blank" >RIV/00216224:14310/25:00141799 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s00339-025-08747-w" target="_blank" >https://link.springer.com/article/10.1007/s00339-025-08747-w</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s00339-025-08747-w" target="_blank" >10.1007/s00339-025-08747-w</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Laser-ablated Gd2O3 thin films: potential ferromagnetic semiconductors?

Popis výsledku v původním jazyce

The emergence of room temperature ferromagnetism (RTFM) in thin films of semiconducting oxides has attracted significant interest due to its promising applications in spintronic and multifunctional electronic devices. Ferromagnetism (FM) in ultrathin layers of magnetic transition-metal oxides and in thin films of undoped oxide semiconductors typically arising from low dimensionality and the formation of surface-related vacancies and defects, makes them attractive for spintronics applications. The primary objective of this research is to investigate the magnetism in ultrathin rare-earth oxide films as a function of dimensionality. In this study, we report the structural and magnetic properties of Gd2O3 thin films grown on LaAlO3 (LAO) substrates using the pulsed laser deposition (PLD) technique. Room-temperature M-H measurements show a significant ferromagnetic response in the out-of-plane direction compared to the in-plane direction. As the Gd2O3 film thickness increases, the ferromagnetic features gradually diminish, and at higher thicknesses (t &gt; 72 nm), a paramagnetic-like behavior is observed, similar to that of bulk Gd2O3 samples. The observed RTFM behaviour in PLD-grown Gd2O3 thin films is attributed to surface oxygen vacancies, as revealed by X-ray photoelectron spectroscopy (XPS) analysis. This study highlights the achievement of the RTFM in Gd2O3 thin films, which holds potential for future spintronic applications.

Název v anglickém jazyce

Laser-ablated Gd2O3 thin films: potential ferromagnetic semiconductors?

Popis výsledku anglicky

The emergence of room temperature ferromagnetism (RTFM) in thin films of semiconducting oxides has attracted significant interest due to its promising applications in spintronic and multifunctional electronic devices. Ferromagnetism (FM) in ultrathin layers of magnetic transition-metal oxides and in thin films of undoped oxide semiconductors typically arising from low dimensionality and the formation of surface-related vacancies and defects, makes them attractive for spintronics applications. The primary objective of this research is to investigate the magnetism in ultrathin rare-earth oxide films as a function of dimensionality. In this study, we report the structural and magnetic properties of Gd2O3 thin films grown on LaAlO3 (LAO) substrates using the pulsed laser deposition (PLD) technique. Room-temperature M-H measurements show a significant ferromagnetic response in the out-of-plane direction compared to the in-plane direction. As the Gd2O3 film thickness increases, the ferromagnetic features gradually diminish, and at higher thicknesses (t &gt; 72 nm), a paramagnetic-like behavior is observed, similar to that of bulk Gd2O3 samples. The observed RTFM behaviour in PLD-grown Gd2O3 thin films is attributed to surface oxygen vacancies, as revealed by X-ray photoelectron spectroscopy (XPS) analysis. This study highlights the achievement of the RTFM in Gd2O3 thin films, which holds potential for future spintronic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics A: Materials Science and Processing

ISSN

0947-8396

e-ISSN

1432-0630

Svazek periodika

131

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

001540636000004

EID výsledku v databázi Scopus

2-s2.0-105011359422