Modulation of room temperature ferromagnetism in WO3 thin films on low-cost Si wafers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F25%3A00140446" target="_blank" >RIV/00216224:14310/25:00140446 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0038109824003843" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0038109824003843</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.ssc.2024.115807" target="_blank" >10.1016/j.ssc.2024.115807</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Modulation of room temperature ferromagnetism in WO3 thin films on low-cost Si wafers

Popis výsledku v původním jazyce

Advancements in room temperature ferromagnetic semiconductors boost the possibility of next generation spintronics. It is quite challenging to achieve the room temperature ferromagnetism which is compatible with promising prospect for application of spintronic devices. Room temperature ferromagnetism can be obtained by introducing vacancies into semiconductor oxides. Therefore, synergetic effects between substrate temperature and Ar:O2 ratio during thin film growth are expected to play important roles in inducing ferromagnetism (FM). Herein, we have investigated the influence of these parameters on room temperature FM of WO3 thin films on low-cost Si wafers. Based on the results, there are three possible conclusions: (1) the major effect of temperature and Ar:O2 ratios on structural composition of WO3 during fabrication process, (2) structural phase of WO3 has a significant influence on RT-FM, and (3) the crucial role of oxygen vacancies in RT-FM of WO3. This study may pave the way for understanding the mechanism of room temperature FM in WO3 thin films and innovating future technological applications.

Název v anglickém jazyce

Modulation of room temperature ferromagnetism in WO3 thin films on low-cost Si wafers

Popis výsledku anglicky

Advancements in room temperature ferromagnetic semiconductors boost the possibility of next generation spintronics. It is quite challenging to achieve the room temperature ferromagnetism which is compatible with promising prospect for application of spintronic devices. Room temperature ferromagnetism can be obtained by introducing vacancies into semiconductor oxides. Therefore, synergetic effects between substrate temperature and Ar:O2 ratio during thin film growth are expected to play important roles in inducing ferromagnetism (FM). Herein, we have investigated the influence of these parameters on room temperature FM of WO3 thin films on low-cost Si wafers. Based on the results, there are three possible conclusions: (1) the major effect of temperature and Ar:O2 ratios on structural composition of WO3 during fabrication process, (2) structural phase of WO3 has a significant influence on RT-FM, and (3) the crucial role of oxygen vacancies in RT-FM of WO3. This study may pave the way for understanding the mechanism of room temperature FM in WO3 thin films and innovating future technological applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solid State Communications

ISSN

0038-1098

e-ISSN

1879-2766

Svazek periodika

397

Číslo periodika v rámci svazku

March

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

1-6

Kód UT WoS článku

001394804000001

EID výsledku v databázi Scopus

2-s2.0-85212576531