X-Ray Nano-Diffraction on Epitaxial Crystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F14%3A00075287" target="_blank" >RIV/00216224:14740/14:00075287 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1166/qm.2014.1127" target="_blank" >http://dx.doi.org/10.1166/qm.2014.1127</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1166/qm.2014.1127" target="_blank" >10.1166/qm.2014.1127</a>

Jazyk výsledku

angličtina

Název v původním jazyce

X-Ray Nano-Diffraction on Epitaxial Crystals

Popis výsledku v původním jazyce

The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for solving the problems associated with lattice parameter and thermal expansion coefficient mismatch, i.e., dislocations, wafer bowing and cracks. For carefully tuned epitaxial growth conditions the lateral expansion of crystals stops once nearest neighbors get sufficiently close. We have carried out scanning nano-diffraction experiments at the ID01 beam-line of the European Synchrotron Radiation Facility (ESRF) in Grenoble on the resulting space-filling arrays of micron-sized crystals to assess their structural properties and crystal quality. Elastic relaxation of the thermal strain causes lattice bending close to the Si interface, while the dislocation network is responsible for minute tilts of the crystals as a whole. To exclude any interference from nearest neighbors, individual Ge crystals were isolated first by chemical etching followed by micro-manipulation inside a scanning electron

Název v anglickém jazyce

X-Ray Nano-Diffraction on Epitaxial Crystals

Popis výsledku anglicky

The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for solving the problems associated with lattice parameter and thermal expansion coefficient mismatch, i.e., dislocations, wafer bowing and cracks. For carefully tuned epitaxial growth conditions the lateral expansion of crystals stops once nearest neighbors get sufficiently close. We have carried out scanning nano-diffraction experiments at the ID01 beam-line of the European Synchrotron Radiation Facility (ESRF) in Grenoble on the resulting space-filling arrays of micron-sized crystals to assess their structural properties and crystal quality. Elastic relaxation of the thermal strain causes lattice bending close to the Si interface, while the dislocation network is responsible for minute tilts of the crystals as a whole. To exclude any interference from nearest neighbors, individual Ge crystals were isolated first by chemical etching followed by micro-manipulation inside a scanning electron

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: CEITEC - central european institute of technology</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Quantum Matter

ISSN

2164-7615

e-ISSN

—

Svazek periodika

3

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

290-296

Kód UT WoS článku

—

EID výsledku v databázi Scopus

—