Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F16%3A00089936" target="_blank" >RIV/00216224:14740/16:00089936 - isvavai.cz</a>

Výsledek na webu

<a href="http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html" target="_blank" >http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S1600576716006397" target="_blank" >10.1107/S1600576716006397</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

Popis výsledku v původním jazyce

Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height.

Název v anglickém jazyce

Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

Popis výsledku anglicky

Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Crystallography

ISSN

1600-5767

e-ISSN

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Svazek periodika

49

Číslo periodika v rámci svazku

June

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

976-986

Kód UT WoS článku

000377020600028

EID výsledku v databázi Scopus

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