Experimental observation of valence band dispersion and increased hole conductivity in CuCr1-xLixO2-ySy
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F21%3A00124295" target="_blank" >RIV/00216224:14740/21:00124295 - isvavai.cz</a>
Výsledek na webu
<a href="https://www.sciencedirect.com/science/article/pii/S1567173921000110?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1567173921000110?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.cap.2021.01.001" target="_blank" >10.1016/j.cap.2021.01.001</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Experimental observation of valence band dispersion and increased hole conductivity in CuCr1-xLixO2-ySy
Popis výsledku v původním jazyce
Delafossite compounds are layered ternary oxides known for simultaneous exhibition of significant carrier conduction and optical transparency. To survey effect of simultaneous cationic and anionic hole doping in prototype delafossite CuCrO2, we have analyzed the structural, optical, impedance and transport mechanism of CuCr1-xLixO2-ySy (x and y ranging 0-2 atomic %) prepared by solid state heating. The substitutional site occupancy of Li??Cr and S-O are confirmed and quantified by Rietveld analysis. Valence band dispersion is demonstrated upon Li-Cr center dot center dot and S-O(x) co-doping by x-ray photoelectron spectroscopy with extended contribution from shallow S 3p antibonding states. From diffuse reflectance spectra, the optical gap (similar to 3.5 eV) is evaluated to be wide even upon co-doping. Carrier density and hole mobility for CCO/(Li-Cr center dot center dot +S-O(x)) to be 5.32 +/- 10(15) cm(-3) and 23.50 cm(2)V(-1)s(-1), respectively. This scheme of band engineering is indicative of a more persuasive alternative to reach the hole conductivity bottleneck threshold.
Název v anglickém jazyce
Experimental observation of valence band dispersion and increased hole conductivity in CuCr1-xLixO2-ySy
Popis výsledku anglicky
Delafossite compounds are layered ternary oxides known for simultaneous exhibition of significant carrier conduction and optical transparency. To survey effect of simultaneous cationic and anionic hole doping in prototype delafossite CuCrO2, we have analyzed the structural, optical, impedance and transport mechanism of CuCr1-xLixO2-ySy (x and y ranging 0-2 atomic %) prepared by solid state heating. The substitutional site occupancy of Li??Cr and S-O are confirmed and quantified by Rietveld analysis. Valence band dispersion is demonstrated upon Li-Cr center dot center dot and S-O(x) co-doping by x-ray photoelectron spectroscopy with extended contribution from shallow S 3p antibonding states. From diffuse reflectance spectra, the optical gap (similar to 3.5 eV) is evaluated to be wide even upon co-doping. Carrier density and hole mobility for CCO/(Li-Cr center dot center dot +S-O(x)) to be 5.32 +/- 10(15) cm(-3) and 23.50 cm(2)V(-1)s(-1), respectively. This scheme of band engineering is indicative of a more persuasive alternative to reach the hole conductivity bottleneck threshold.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10305 - Fluids and plasma physics (including surface physics)
Návaznosti výsledku
Projekt
—
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2021
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
CURRENT APPLIED PHYSICS
ISSN
1567-1739
e-ISSN
—
Svazek periodika
25
Číslo periodika v rámci svazku
MAY
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
7
Strana od-do
90-96
Kód UT WoS článku
000636605600004
EID výsledku v databázi Scopus
2-s2.0-85102564270