DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3

Popis výsledku v původním jazyce

Recently, a new type of diluted magnetic semiconductors based on the tetradymite-type structure was described [1,2]. In this contribution, we compare the transport and magnetic properties of Sb2-xVxTe3 in the single crystalline form (x = 0.0-0.03) with the properties of thin films grown by MBE in which the content of vanadium is much higher (x = 0.0-0.35). It was found that the vanadium-doping in single crystals of Sb2Te3 does not change the concentration of holes yet it gives rise to ferromagnetism atlow temperatures. The Curie temperature TC increases with the vanadium content and reaches 22 K for a single crystal of Sb1.97V0.03Te3. In the case of thin films of Sb2-xVxTe3, the concentration of holes determined from the Hall effect increases with theincreasing concentration of vanadium and the Curie temperature of a film with x = 0.35 reaches at least 177 K, the temperature comparable or higher than that obtained with Mn-doped GaAs.

Název v anglickém jazyce

DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3

Popis výsledku anglicky

Recently, a new type of diluted magnetic semiconductors based on the tetradymite-type structure was described [1,2]. In this contribution, we compare the transport and magnetic properties of Sb2-xVxTe3 in the single crystalline form (x = 0.0-0.03) with the properties of thin films grown by MBE in which the content of vanadium is much higher (x = 0.0-0.35). It was found that the vanadium-doping in single crystals of Sb2Te3 does not change the concentration of holes yet it gives rise to ferromagnetism atlow temperatures. The Curie temperature TC increases with the vanadium content and reaches 22 K for a single crystal of Sb1.97V0.03Te3. In the case of thin films of Sb2-xVxTe3, the concentration of holes determined from the Hall effect increases with theincreasing concentration of vanadium and the Curie temperature of a film with x = 0.35 reaches at least 177 K, the temperature comparable or higher than that obtained with Mn-doped GaAs.

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2006

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

21st General Conference of the EPS Condensed Matter Division

ISBN

2-914771-32-0

ISSN

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e-ISSN

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Počet stran výsledku

1

Strana od-do

252

Název nakladatele

Deutschen Physikalischen Gesellschaft

Místo vydání

Dresden

Místo konání akce

Dresden

Datum konání akce

27. 3. 2006

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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