Planární multivrstvy přípravené z chalkogenidových tenkých vrstev systémů As-Se a Ge-Se a polymerních vrstev PAI pomocí termického napařování a rotačního lití

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F08%3A00007549" target="_blank" >RIV/00216275:25310/08:00007549 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques

Popis výsledku v původním jazyce

We report the preparation of multilayers based on polyamide-imide polymer and As-Se or Ge-Se chalcogenide thin films. Chalcogenide films of As-Se and Ge-Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide-imide films. Fifteen layers of PAI + As-Se system and nineteen layers of PAI + Ge-Se system were coated. Optical properties of prepared multilayers have been established using UV/vis/NIR and Ellipsometric spectroscopy. Both, PAI + As-Se and PAI + Ge-Se multilayer systems, exhibited the high-reflection bands centered around 830 nm and 1350 nm, respectively. The shift of the band position of PAI + Ge-Se multilayers to lower energies was caused by higher thickness of Ge-Se films. The bandwidthof reflection band of 8 PAI + 7 As-Se multilayer was 90 nm while bandwidth of PAI + Ge-Se system decreased to 70 nm because Ge-Se films have 0.1 lower refractive index against As-Se films. Design of 1D-photonic crystals based on alternati

Název v anglickém jazyce

Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques

Popis výsledku anglicky

We report the preparation of multilayers based on polyamide-imide polymer and As-Se or Ge-Se chalcogenide thin films. Chalcogenide films of As-Se and Ge-Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide-imide films. Fifteen layers of PAI + As-Se system and nineteen layers of PAI + Ge-Se system were coated. Optical properties of prepared multilayers have been established using UV/vis/NIR and Ellipsometric spectroscopy. Both, PAI + As-Se and PAI + Ge-Se multilayer systems, exhibited the high-reflection bands centered around 830 nm and 1350 nm, respectively. The shift of the band position of PAI + Ge-Se multilayers to lower energies was caused by higher thickness of Ge-Se films. The bandwidthof reflection band of 8 PAI + 7 As-Se multilayer was 90 nm while bandwidth of PAI + Ge-Se system decreased to 70 nm because Ge-Se films have 0.1 lower refractive index against As-Se films. Design of 1D-photonic crystals based on alternati

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Non-Crystalline Solids

ISSN

0022-3093

e-ISSN

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Svazek periodika

354

Číslo periodika v rámci svazku

2-9

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

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Kód UT WoS článku

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EID výsledku v databázi Scopus

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