Defektní struktura monokrystalů Sb2-xCrxTe3

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F08%3A00007766" target="_blank" >RIV/00216275:25310/08:00007766 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Defect structure of Sb2-xCrxTe3 single crystals

Popis výsledku v původním jazyce

Single crystals of Sb2Te3 doped with Cr (cCr= 0 ? 6 x1020cm-3) were prepared by the Bridgman method. The measurements of the Hall coefficient reveal a non-monotonous dependence of hole concentrations on the Cr content in the crystal. The hole concentration decreases at low content of Cr while at higher content of Cr increases again. However, according to magnetic measurements Cr atoms enter the structure and form uncharged substitutional defects , which can not affect the free carrier concentration directly. The observed dependence can be elucidated by means of a point defect model. The model is based on an assumption that defect structure of Sb2Te3 can be treated as hybrid Schottky and antisite defect disorder. Thus, we assume an interaction of with the most populated native defects in the structure - antisite defects and vacancies in the Te sublattice .

Název v anglickém jazyce

Defect structure of Sb2-xCrxTe3 single crystals

Popis výsledku anglicky

Single crystals of Sb2Te3 doped with Cr (cCr= 0 ? 6 x1020cm-3) were prepared by the Bridgman method. The measurements of the Hall coefficient reveal a non-monotonous dependence of hole concentrations on the Cr content in the crystal. The hole concentration decreases at low content of Cr while at higher content of Cr increases again. However, according to magnetic measurements Cr atoms enter the structure and form uncharged substitutional defects , which can not affect the free carrier concentration directly. The observed dependence can be elucidated by means of a point defect model. The model is based on an assumption that defect structure of Sb2Te3 can be treated as hybrid Schottky and antisite defect disorder. Thus, we assume an interaction of with the most populated native defects in the structure - antisite defects and vacancies in the Te sublattice .

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Svazek periodika

2008

Číslo periodika v rámci svazku

104

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

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Kód UT WoS článku

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EID výsledku v databázi Scopus

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