Sputtering and pulsed laser deposition for near and mid-infrared applications: A comparative study of Ge25Sb10S65 and Ge25Sb10Se65 amorphous thin films.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F11%3A39892140" target="_blank" >RIV/00216275:25310/11:39892140 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1111/j.1744-7402.2010.02571.x" target="_blank" >http://dx.doi.org/10.1111/j.1744-7402.2010.02571.x</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1111/j.1744-7402.2010.02571.x" target="_blank" >10.1111/j.1744-7402.2010.02571.x</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Sputtering and pulsed laser deposition for near and mid-infrared applications: A comparative study of Ge25Sb10S65 and Ge25Sb10Se65 amorphous thin films.

Popis výsledku v původním jazyce

The deposition of Ge(25)Sb(10)S(65) and Ge(25)Sb(10)Se(65) amorphous chalcogenide thin films was performed by radio-frequency magnetron sputtering and pulsed laser deposition technique. The deposited layers were characterized by studying their morphology, topography, chemical composition, structure, and optical functions permitting a direct comparison of two deposition methods for obtaining attractive amorphous chalcogenide films. Reactive ion etching was then used to pattern rib/ridge waveguides in sulfide and selenide films with low surface roughness, vertical sidewalls, and reasonable etching rate. Optical losses of fabricated waveguides were measured at 1550 nm with values better than 1 dB/cm obtained for sulfide/selenide films deposited by both techniques.

Název v anglickém jazyce

Sputtering and pulsed laser deposition for near and mid-infrared applications: A comparative study of Ge25Sb10S65 and Ge25Sb10Se65 amorphous thin films.

Popis výsledku anglicky

The deposition of Ge(25)Sb(10)S(65) and Ge(25)Sb(10)Se(65) amorphous chalcogenide thin films was performed by radio-frequency magnetron sputtering and pulsed laser deposition technique. The deposited layers were characterized by studying their morphology, topography, chemical composition, structure, and optical functions permitting a direct comparison of two deposition methods for obtaining attractive amorphous chalcogenide films. Reactive ion etching was then used to pattern rib/ridge waveguides in sulfide and selenide films with low surface roughness, vertical sidewalls, and reasonable etching rate. Optical losses of fabricated waveguides were measured at 1550 nm with values better than 1 dB/cm obtained for sulfide/selenide films deposited by both techniques.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

<a href="/cs/project/GA104%2F08%2F0229" target="_blank" >GA104/08/0229: Tenké vrstvy deponované pulzními lasery</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

International Journal of Applied Ceramic Technology

ISSN

1546-542X

e-ISSN

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Svazek periodika

8

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

990-1000

Kód UT WoS článku

000297249200002

EID výsledku v databázi Scopus

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