Low-temperature transport properties of Tl-doped Bi2Te3 single crystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F13%3A39896438" target="_blank" >RIV/00216275:25310/13:39896438 - isvavai.cz</a>

Výsledek na webu

<a href="http://prb.aps.org/abstract/PRB/v88/i4/e045202" target="_blank" >http://prb.aps.org/abstract/PRB/v88/i4/e045202</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.88.045202" target="_blank" >10.1103/PhysRevB.88.045202</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Low-temperature transport properties of Tl-doped Bi2Te3 single crystals

Popis výsledku v původním jazyce

While the bulk, stoichiometric Bi2Te3 single crystals often exhibit p-type metallic electrical conduction due to the BiTe-type antisite defects, doping by thallium (Bi(2-x)Tl(x)Te3,x = 0-0.3) progressively changes the electrical conduction of single crystals from p type (0{=x{=0.08) to n type (0.12{=x{= 0.30). This is observed via measurements of both the Seebeck coefficient and the Hall effect performed in the crystallographic (0001) plane in the temperature range of 2-300 K. Since any kind of substitution of Tl on the Bi or Te sublattices would result in an enhancement of the density of holes rather than its decrease, and because simple incorporation of Tl at interstitial sites or in the van der Waals gap is unlikely as it would increase the latticeparameters which is not observed in experiments, incorporation of Tl likely proceeds via the formation of TlBiTe2 fragments coexisting with the quintuple layer structure of Bi2Te3. At low levels of Tl, 0{=x{= 0.05, the temperature-depende

Název v anglickém jazyce

Low-temperature transport properties of Tl-doped Bi2Te3 single crystals

Popis výsledku anglicky

While the bulk, stoichiometric Bi2Te3 single crystals often exhibit p-type metallic electrical conduction due to the BiTe-type antisite defects, doping by thallium (Bi(2-x)Tl(x)Te3,x = 0-0.3) progressively changes the electrical conduction of single crystals from p type (0{=x{=0.08) to n type (0.12{=x{= 0.30). This is observed via measurements of both the Seebeck coefficient and the Hall effect performed in the crystallographic (0001) plane in the temperature range of 2-300 K. Since any kind of substitution of Tl on the Bi or Te sublattices would result in an enhancement of the density of holes rather than its decrease, and because simple incorporation of Tl at interstitial sites or in the van der Waals gap is unlikely as it would increase the latticeparameters which is not observed in experiments, incorporation of Tl likely proceeds via the formation of TlBiTe2 fragments coexisting with the quintuple layer structure of Bi2Te3. At low levels of Tl, 0{=x{= 0.05, the temperature-depende

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B

ISSN

1098-0121

e-ISSN

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Svazek periodika

88

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

"045202-1"-"1-7"

Kód UT WoS článku

000321838800004

EID výsledku v databázi Scopus

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