The Power Factor of Bi(2-x)Tl(x)Se(3) Single Crystals

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

The Power Factor of Bi(2-x)Tl(x)Se(3) Single Crystals

Popis výsledku v původním jazyce

Single crystals of the ternary system Bi(2-x)Tl(x)Se(3) (nominaly x = 0.0-0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity, Hall coefficient RH(B||c) and Seebeck coefficient S. The measurements indicate that incorporation of Tl into Bi2Se3 lowers the concentration of free electrons and enhances their mobility. This effect is explained within the framework of the point defects in the crystal lattice, with formation of substitutional defects of thallium in place of bismuth (Tl(Bi)) and a decrease in the concentration of selenium vacancies (V(Se)2+). The temperature dependence of the power factor of the samples is also discussed. As a consequence of the thallium doping we observe a significant increase of the power factor compared to parental Bi2Se3.

Název v anglickém jazyce

The Power Factor of Bi(2-x)Tl(x)Se(3) Single Crystals

Popis výsledku anglicky

Single crystals of the ternary system Bi(2-x)Tl(x)Se(3) (nominaly x = 0.0-0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity, Hall coefficient RH(B||c) and Seebeck coefficient S. The measurements indicate that incorporation of Tl into Bi2Se3 lowers the concentration of free electrons and enhances their mobility. This effect is explained within the framework of the point defects in the crystal lattice, with formation of substitutional defects of thallium in place of bismuth (Tl(Bi)) and a decrease in the concentration of selenium vacancies (V(Se)2+). The temperature dependence of the power factor of the samples is also discussed. As a consequence of the thallium doping we observe a significant increase of the power factor compared to parental Bi2Se3.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

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Svazek periodika

39

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

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Kód UT WoS článku

000281393000083

EID výsledku v databázi Scopus

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