Změna typu elektrické vodivosti v kvaternárních monokrystalech BixSbyPbzSe3

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F05%3A00002832" target="_blank" >RIV/00216275:25310/05:00002832 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

N-type to p-type crossover in quaternary BixSbyPbzSe3 single crystals

Popis výsledku v původním jazyce

We report on the preparation and some physical properties of a new type quaternary system based on Bi2Se3 co-doped with Sb and Pb. Single crystal samples were prepared using the Bridgman technique and were characterized by measurements of the lattice parameters, electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity. Atomic emission spectroscopy was used to find the concentration profiles of Sb and Pb along the single-crystalline ingots. Progressive co-doping of the Bi2Se3 crystal lattice with Sb and Pb leads to a crossover of the initially n-type conduction to that of the p-type. It is assumed that both Sb and Pb enter the Bi-sublattice. Physical properties as well as the change in the dominant carrier type are discussed in the context of the concentration of various point defects. A new complex defect is introduced to account for some features of the data.

Název v anglickém jazyce

N-type to p-type crossover in quaternary BixSbyPbzSe3 single crystals

Popis výsledku anglicky

We report on the preparation and some physical properties of a new type quaternary system based on Bi2Se3 co-doped with Sb and Pb. Single crystal samples were prepared using the Bridgman technique and were characterized by measurements of the lattice parameters, electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity. Atomic emission spectroscopy was used to find the concentration profiles of Sb and Pb along the single-crystalline ingots. Progressive co-doping of the Bi2Se3 crystal lattice with Sb and Pb leads to a crossover of the initially n-type conduction to that of the p-type. It is assumed that both Sb and Pb enter the Bi-sublattice. Physical properties as well as the change in the dominant carrier type are discussed in the context of the concentration of various point defects. A new complex defect is introduced to account for some features of the data.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2005

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Svazek periodika

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Číslo periodika v rámci svazku

97

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

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Kód UT WoS článku

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EID výsledku v databázi Scopus

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