Tuning the free electron concentration in Sr-doped Bi2Se3

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F13%3A39896427" target="_blank" >RIV/00216275:25310/13:39896427 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.sciencedirect.com/science/article/pii/S0022369713000267" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0022369713000267</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jpcs.2013.01.015" target="_blank" >10.1016/j.jpcs.2013.01.015</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Tuning the free electron concentration in Sr-doped Bi2Se3

Popis výsledku v původním jazyce

Single crystals of Bi2Se3 doped with strontium were grown from high purity elements. The prepared single crystals were characterized using x-ray diffraction. Inductively coupled plasma atomic emission spectroscopy (ICP-AES) was used to determine the actual concentrations of strontium in the studied samples. The transport properties were measured for all of the samples. The Seebeck coefficient, S, the Hall coefficient RH, and the electrical conductivity sigma, were measured in the temperature range from80 K to 470 K. These data indicated acceptor-like behavior of strontium in Bi2Se3. A detailed study of the doping efficiency of strontium was performed. Interestingly, the Hall mobility of the free carriers increases markedly upon doping with Sr. This effect was qualitatively explained within a model of point defects in the crystal lattice of Bi2-xSrxSe3, which implied a decrease in the concentration of scattering centers.

Název v anglickém jazyce

Tuning the free electron concentration in Sr-doped Bi2Se3

Popis výsledku anglicky

Single crystals of Bi2Se3 doped with strontium were grown from high purity elements. The prepared single crystals were characterized using x-ray diffraction. Inductively coupled plasma atomic emission spectroscopy (ICP-AES) was used to determine the actual concentrations of strontium in the studied samples. The transport properties were measured for all of the samples. The Seebeck coefficient, S, the Hall coefficient RH, and the electrical conductivity sigma, were measured in the temperature range from80 K to 470 K. These data indicated acceptor-like behavior of strontium in Bi2Se3. A detailed study of the doping efficiency of strontium was performed. Interestingly, the Hall mobility of the free carriers increases markedly upon doping with Sr. This effect was qualitatively explained within a model of point defects in the crystal lattice of Bi2-xSrxSe3, which implied a decrease in the concentration of scattering centers.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics and Chemistry of Solids

ISSN

0022-3697

e-ISSN

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Svazek periodika

74

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

5

Strana od-do

746-750

Kód UT WoS článku

000316429000017

EID výsledku v databázi Scopus

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