High-pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F13%3A39896455" target="_blank" >RIV/00216275:25310/13:39896455 - isvavai.cz</a>

Výsledek na webu

<a href="http://onlinelibrary.wiley.com/doi/10.1002/pssb.201200672/abstract" target="_blank" >http://onlinelibrary.wiley.com/doi/10.1002/pssb.201200672/abstract</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201200672" target="_blank" >10.1002/pssb.201200672</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3

Popis výsledku v původním jazyce

Bi2Se3, Bi2Te3, and Sb2Te3 are narrow bandgap semiconductors with tetradymite crystal structure (R-3m) which have been extensively studied along with their alloys due to their promising operation as thermoelectric materials in the temperature range between 300 and 500 K. Studies on these layered semiconductors have increased tremendously in the last years since they have been recently predicted and demonstrated to behave as 3D topological insulators. In particular, a number of high-pressure studies havebeen done in the recent years in these materials. In this work we summarize the main results of the high-pressure studies performed in this family of semiconductors to date. In particular, we review recent results that address the main characteristics of the pressure-induced electronic topological transition and structural phase transitions observed in this family of compounds. Future high-pressure studies to be performed on these 3D topological insulators are also commented.

Název v anglickém jazyce

High-pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3

Popis výsledku anglicky

Bi2Se3, Bi2Te3, and Sb2Te3 are narrow bandgap semiconductors with tetradymite crystal structure (R-3m) which have been extensively studied along with their alloys due to their promising operation as thermoelectric materials in the temperature range between 300 and 500 K. Studies on these layered semiconductors have increased tremendously in the last years since they have been recently predicted and demonstrated to behave as 3D topological insulators. In particular, a number of high-pressure studies havebeen done in the recent years in these materials. In this work we summarize the main results of the high-pressure studies performed in this family of semiconductors to date. In particular, we review recent results that address the main characteristics of the pressure-induced electronic topological transition and structural phase transitions observed in this family of compounds. Future high-pressure studies to be performed on these 3D topological insulators are also commented.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi B-Basic Research

ISSN

0370-1972

e-ISSN

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Svazek periodika

250

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

8

Strana od-do

669-676

Kód UT WoS článku

000318791900002

EID výsledku v databázi Scopus

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