Crystallization behavior in Se90Te10 and Se80Te20 thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F14%3A39898147" target="_blank" >RIV/00216275:25310/14:39898147 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4869547" target="_blank" >http://dx.doi.org/10.1063/1.4869547</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4869547" target="_blank" >10.1063/1.4869547</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Crystallization behavior in Se90Te10 and Se80Te20 thin films

Popis výsledku v původním jazyce

Isothermal crystal growth kinetics in Se90Te10 and Se80Te20 thin films was studied by microscopy and in situ X-ray diffraction (XRD) measurements. The spherulite-like crystals grew linearly with time. In a narrow temperature range of between 65 and 85 degrees C, crystal growth rates exhibit simple exponential behavior with activation energies E-G = 193 +/- 4 kJ mol(-1) for Se90Te10 and E-G = 195 +/- 4 kJ mol(-1) for Se80Te20. The crystal growth in both compositions is controlled by liquid-crystal interface kinetics and can be described by a screw dislocation growth model. From the XRD data, the crystallization fraction was estimated. The crystallization data were described by Johnson-Mehl-Avrami (JMA) model with Avrami exponents m = 1.4 +/- 0.3 for Se90Te10 and m = 1.6 +/- 0.4 for Se80Te20. Activation energies were estimated from the temperature dependence of rate constant evaluated from the JMA model. The activation energies of nucleation-growth process were found to be E-c = 184 +/-

Název v anglickém jazyce

Crystallization behavior in Se90Te10 and Se80Te20 thin films

Popis výsledku anglicky

Isothermal crystal growth kinetics in Se90Te10 and Se80Te20 thin films was studied by microscopy and in situ X-ray diffraction (XRD) measurements. The spherulite-like crystals grew linearly with time. In a narrow temperature range of between 65 and 85 degrees C, crystal growth rates exhibit simple exponential behavior with activation energies E-G = 193 +/- 4 kJ mol(-1) for Se90Te10 and E-G = 195 +/- 4 kJ mol(-1) for Se80Te20. The crystal growth in both compositions is controlled by liquid-crystal interface kinetics and can be described by a screw dislocation growth model. From the XRD data, the crystallization fraction was estimated. The crystallization data were described by Johnson-Mehl-Avrami (JMA) model with Avrami exponents m = 1.4 +/- 0.3 for Se90Te10 and m = 1.6 +/- 0.4 for Se80Te20. Activation energies were estimated from the temperature dependence of rate constant evaluated from the JMA model. The activation energies of nucleation-growth process were found to be E-c = 184 +/-

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/GAP106%2F11%2F1152" target="_blank" >GAP106/11/1152: Reverzibilní krystalizace a strukturni relaxace amorfních materiálů pro záznam informace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Svazek periodika

115

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

"123506-1"-"123506-7"

Kód UT WoS článku

000333901100015

EID výsledku v databázi Scopus

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