Surface corrugating direct laser writing of microstructures in ternary chalcogenide films using a continuous-wave super-bandgap laser

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F15%3A39899388" target="_blank" >RIV/00216275:25310/15:39899388 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/0022-3727/48/26/265106" target="_blank" >http://dx.doi.org/10.1088/0022-3727/48/26/265106</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0022-3727/48/26/265106" target="_blank" >10.1088/0022-3727/48/26/265106</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Surface corrugating direct laser writing of microstructures in ternary chalcogenide films using a continuous-wave super-bandgap laser

Popis výsledku v původním jazyce

Direct laser writing using a tightly focused 442 nm continuous-wave laser was applied to corrugate the surface of ternary As-S-Se chalcogenide thin films with high spatial resolution. The topography of the emerging surface relief structures and analysesof the underlying photo thermal processes indicate that depending on the beam intensity and writing speed the formation mechanisms of the surface patterns are mainly based on photoexpansion caused by thermoelastic deformation, mass flow out of the regionof the highest local intensity in the center of the exposing laser beam resulting from an induced surface tension gradient, and decomposition/vaporization processes generated by the local heating due to absorption of the laser light. Examples of writtenperiodic pattern arrays demonstrate that direct laser writing is a very promising method for the fabrication of surface relief structures into ternary chalcogenide thin films

Název v anglickém jazyce

Surface corrugating direct laser writing of microstructures in ternary chalcogenide films using a continuous-wave super-bandgap laser

Popis výsledku anglicky

Direct laser writing using a tightly focused 442 nm continuous-wave laser was applied to corrugate the surface of ternary As-S-Se chalcogenide thin films with high spatial resolution. The topography of the emerging surface relief structures and analysesof the underlying photo thermal processes indicate that depending on the beam intensity and writing speed the formation mechanisms of the surface patterns are mainly based on photoexpansion caused by thermoelastic deformation, mass flow out of the regionof the highest local intensity in the center of the exposing laser beam resulting from an induced surface tension gradient, and decomposition/vaporization processes generated by the local heating due to absorption of the laser light. Examples of writtenperiodic pattern arrays demonstrate that direct laser writing is a very promising method for the fabrication of surface relief structures into ternary chalcogenide thin films

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

<a href="/cs/project/EE2.3.30.0058" target="_blank" >EE2.3.30.0058: Rozvoj kvalitních vědeckovýzkumných týmů na Univerzitě Pardubice</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics D: Applied Physics

ISSN

0022-3727

e-ISSN

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Svazek periodika

48

Číslo periodika v rámci svazku

26

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

"265106-1"-"265106-9"

Kód UT WoS článku

000356618100008

EID výsledku v databázi Scopus

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