Thermoelectric properties of Tl-doped SnSe - a hint of phononic structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F16%3A39901063" target="_blank" >RIV/00216275:25310/16:39901063 - isvavai.cz</a>

Výsledek na webu

<a href="http://link.springer.com/article/10.1007%2Fs11664-016-4415-7" target="_blank" >http://link.springer.com/article/10.1007%2Fs11664-016-4415-7</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11664-016-4415-7" target="_blank" >10.1007/s11664-016-4415-7</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thermoelectric properties of Tl-doped SnSe - a hint of phononic structure

Popis výsledku v původním jazyce

Polycrystalline samples of composition Sn1-xTlxSe (for x = 0 - 0.04) were synthesized from elements of 5N purity at elevated temperatures. The phase purity of the products was verified by X-ray diffraction. The samples for measurement of the transport properties were prepared using hot pressing. The samples were then characterized by measurement of the electrical conductivity, the Hall coefficient, the Seebeck coefficient, and the thermal conductivity over a temperature range of 300 - 725 K. All of the samples demonstrate p-type conductivity. Tl markedly enhances the carrier concentration. We discuss the influence of Tl substitution on the free carrier concentration and the thermoelectric performance. The investigation of the thermoelectric properties shows an order of magnitude improvement, with ZT reaching 0.6 at 725 K. We discuss the distinctive nature of the thermal conductivity of SnSe.

Název v anglickém jazyce

Thermoelectric properties of Tl-doped SnSe - a hint of phononic structure

Popis výsledku anglicky

Polycrystalline samples of composition Sn1-xTlxSe (for x = 0 - 0.04) were synthesized from elements of 5N purity at elevated temperatures. The phase purity of the products was verified by X-ray diffraction. The samples for measurement of the transport properties were prepared using hot pressing. The samples were then characterized by measurement of the electrical conductivity, the Hall coefficient, the Seebeck coefficient, and the thermal conductivity over a temperature range of 300 - 725 K. All of the samples demonstrate p-type conductivity. Tl markedly enhances the carrier concentration. We discuss the influence of Tl substitution on the free carrier concentration and the thermoelectric performance. The investigation of the thermoelectric properties shows an order of magnitude improvement, with ZT reaching 0.6 at 725 K. We discuss the distinctive nature of the thermal conductivity of SnSe.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/GA16-07711S" target="_blank" >GA16-07711S: Systematická studie vlivu výšky Schottkyho bariéry na energetické filtrování elektronů v termoelektrických nanokompozitech.</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

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Svazek periodika

45

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

2943-2949

Kód UT WoS článku

000375074700041

EID výsledku v databázi Scopus

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