Crystal Growth Kinetics and Viscous Behavior in Ge2Sb2Se5 Undercooled Melt

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F16%3A39901755" target="_blank" >RIV/00216275:25310/16:39901755 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/acs.jpcb.6b05455" target="_blank" >http://dx.doi.org/10.1021/acs.jpcb.6b05455</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpcb.6b05455" target="_blank" >10.1021/acs.jpcb.6b05455</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Crystal Growth Kinetics and Viscous Behavior in Ge2Sb2Se5 Undercooled Melt

Popis výsledku v původním jazyce

Crystal growth, viscosity, and melting were studied in Ge2Sb2Se5 bulk samples. The crystals formed a compact layer on the surface of the sample and then continued to grow from the surface to the central part of the sample. The formed crystalline layer grew linearly with time, which suggests that the crystal growth is controlled by liquid crystal interface kinetics. Combining the growth data with the measured viscosities and melting data, crystal growth could be described on the basis of standard crystal growth models. The screw dislocation growth model seems to be operative in describing the temperature dependence of the crystal growth rate in the studied material in a wide temperature range. A detailed discussion on the relation between the kinetic coefficient of crystal growth and viscosity (u(kin) proportional to eta(-xi)) is presented. The activation energy of crystal growth was found to be higher than the activation energy of crystallization obtained from differential scanning calorimetry, which covers the whole nucleation-growth process. This difference is considered and explained under the experimental conditions.

Název v anglickém jazyce

Crystal Growth Kinetics and Viscous Behavior in Ge2Sb2Se5 Undercooled Melt

Popis výsledku anglicky

Crystal growth, viscosity, and melting were studied in Ge2Sb2Se5 bulk samples. The crystals formed a compact layer on the surface of the sample and then continued to grow from the surface to the central part of the sample. The formed crystalline layer grew linearly with time, which suggests that the crystal growth is controlled by liquid crystal interface kinetics. Combining the growth data with the measured viscosities and melting data, crystal growth could be described on the basis of standard crystal growth models. The screw dislocation growth model seems to be operative in describing the temperature dependence of the crystal growth rate in the studied material in a wide temperature range. A detailed discussion on the relation between the kinetic coefficient of crystal growth and viscosity (u(kin) proportional to eta(-xi)) is presented. The activation energy of crystal growth was found to be higher than the activation energy of crystallization obtained from differential scanning calorimetry, which covers the whole nucleation-growth process. This difference is considered and explained under the experimental conditions.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry B

ISSN

1520-6106

e-ISSN

—

Svazek periodika

120

Číslo periodika v rámci svazku

32

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

7998-8006

Kód UT WoS článku

000381778200024

EID výsledku v databázi Scopus

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