Exposure enhanced photoluminescence of CdS0.9Se0.1 quantum dots embedded in spin-coated Ge25S75 thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F17%3A39911011" target="_blank" >RIV/00216275:25310/17:39911011 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1039/C7RA09540F" target="_blank" >http://dx.doi.org/10.1039/C7RA09540F</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/C7RA09540F" target="_blank" >10.1039/C7RA09540F</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Exposure enhanced photoluminescence of CdS0.9Se0.1 quantum dots embedded in spin-coated Ge25S75 thin films

Popis výsledku v původním jazyce

Semiconductor quantum dots (QDs) are well known photoluminescent materials. Their potential practical applications depend on their physico-chemical and luminescent properties and also on the properties of hosting material. To ensure that QDs retain their photoluminescence during the preparation of a suitable solid composite form, the solution based casting techniques with deposition at lower temperatures are usually used. In our work, we have doped an inorganic Ge25S75 chalcogenide glass matrix with synthesized CdS0.9Se0.1 QDs and prepared thin films by the solution based spin-coating technique. In comparison with commonly used polymers the Ge25S75 chalcogenide glass thin films a possess high refractive index and wide VIS-NIR-MIR optical transparent region. We also report on the phenomenon of significant UV exposure induced increase of doped thin film photoluminescence intensity which can be exploited in local photo-induced photoluminescence enhancement of doped chalcogenide glass thin films.

Název v anglickém jazyce

Exposure enhanced photoluminescence of CdS0.9Se0.1 quantum dots embedded in spin-coated Ge25S75 thin films

Popis výsledku anglicky

Semiconductor quantum dots (QDs) are well known photoluminescent materials. Their potential practical applications depend on their physico-chemical and luminescent properties and also on the properties of hosting material. To ensure that QDs retain their photoluminescence during the preparation of a suitable solid composite form, the solution based casting techniques with deposition at lower temperatures are usually used. In our work, we have doped an inorganic Ge25S75 chalcogenide glass matrix with synthesized CdS0.9Se0.1 QDs and prepared thin films by the solution based spin-coating technique. In comparison with commonly used polymers the Ge25S75 chalcogenide glass thin films a possess high refractive index and wide VIS-NIR-MIR optical transparent region. We also report on the phenomenon of significant UV exposure induced increase of doped thin film photoluminescence intensity which can be exploited in local photo-induced photoluminescence enhancement of doped chalcogenide glass thin films.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

RSC Advances

ISSN

2046-2069

e-ISSN

—

Svazek periodika

7

Číslo periodika v rámci svazku

85

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

53830-53838

Kód UT WoS článku

000416831000020

EID výsledku v databázi Scopus

—