Amorphous Ge-Sb-Se thin films fabricated by co-sputtering: Properties and photosensitivity

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F18%3A39912747" target="_blank" >RIV/00216275:25310/18:39912747 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1111/jace.15453" target="_blank" >http://dx.doi.org/10.1111/jace.15453</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1111/jace.15453" target="_blank" >10.1111/jace.15453</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Amorphous Ge-Sb-Se thin films fabricated by co-sputtering: Properties and photosensitivity

Popis výsledku v původním jazyce

Amorphous Ge-Sb-Se thin films were fabricated by a rf-magnetron co-sputtering technique employing the following cathodes: GeSe2, Sb2Se3, and Ge28Sb12Se60. The influence of the composition on the optical properties was studied. Optical properties were analyzed based on variable angle spectroscopic ellipsometry and UV-Vis-NIR spectrophotometry. The results show that the optical bandgap range 1.35-2.08 eV with corresponding refractive index ranging from 3.33 to 2.36 can be reliably covered. Furthermore, morphological and topographical properties of selenide-sputtered films studied by scanning electron microscopy and atomic force microscopy showed a good quality of fabricated films. In addition, structure of the films was controlled using Raman scattering spectroscopy. Finally, irreversible photoinduced changes by means of change in optical bandgap energy and refractive index of co-sputtered films were studied revealing the photobleaching effect in Ge-rich films when irradiated by near-bandgap light under Ar atmosphere. The photobleaching effect tends to decrease with increasing antimony content.

Název v anglickém jazyce

Amorphous Ge-Sb-Se thin films fabricated by co-sputtering: Properties and photosensitivity

Popis výsledku anglicky

Amorphous Ge-Sb-Se thin films were fabricated by a rf-magnetron co-sputtering technique employing the following cathodes: GeSe2, Sb2Se3, and Ge28Sb12Se60. The influence of the composition on the optical properties was studied. Optical properties were analyzed based on variable angle spectroscopic ellipsometry and UV-Vis-NIR spectrophotometry. The results show that the optical bandgap range 1.35-2.08 eV with corresponding refractive index ranging from 3.33 to 2.36 can be reliably covered. Furthermore, morphological and topographical properties of selenide-sputtered films studied by scanning electron microscopy and atomic force microscopy showed a good quality of fabricated films. In addition, structure of the films was controlled using Raman scattering spectroscopy. Finally, irreversible photoinduced changes by means of change in optical bandgap energy and refractive index of co-sputtered films were studied revealing the photobleaching effect in Ge-rich films when irradiated by near-bandgap light under Ar atmosphere. The photobleaching effect tends to decrease with increasing antimony content.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of the American Ceramic Society

ISSN

0002-7820

e-ISSN

—

Svazek periodika

101

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

2877-2887

Kód UT WoS článku

000431661300023

EID výsledku v databázi Scopus

2-s2.0-85041203904