X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F18%3A39912748" target="_blank" >RIV/00216275:25310/18:39912748 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1111/jace.15512" target="_blank" >http://dx.doi.org/10.1111/jace.15512</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1111/jace.15512" target="_blank" >10.1111/jace.15512</a>

Jazyk výsledku

angličtina

Název v původním jazyce

X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films

Popis výsledku v původním jazyce

Pulsed laser deposition was used to prepare amorphous thin films from (GeSe2)(100-x)(Sb2Se3)(x) system (x=0, 5, 10, 20, 30, 40, 50, and 60). The chemical composition of fabricated thin films was analyzed via X-ray photoelectron spectroscopy (XPS) and compared to energy dispersive spectroscopy (EDS) data. The results of both techniques agree well: a small deficiency in chalcogen element and an excess of antimony was found. The structure of as-deposited thin films has been investigated by XPS. The presence of the two main structural units, [GeSe4] and [SbSe3] proposed by Raman scattering spectroscopy data analysis, was confirmed by XPS. Moreover, XPS core level spectra analysis revealed the presence of M-M bonds (M=Ge, Sb) in (Ge,Sb)-Ge-(Se)(3) and (Ge,Sb)-Sb-(Se)(2) entities that could correspond to Ge-based tetrahedra and Sb-based pyramids where one of its Se atoms at corners is substituted by Ge or Sb ones. The content of depicted M-M bonds tends to increase with introduction of antimony in the amorphous network of as-deposited thin films from x=0 to x=40 and then it decreases. XPS analysis of as-deposited thin films shows also the presence of the (Ge,Sb)-Se-(Ge,Sb) and Se-Se-(Ge,Sb) entities.

Název v anglickém jazyce

X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films

Popis výsledku anglicky

Pulsed laser deposition was used to prepare amorphous thin films from (GeSe2)(100-x)(Sb2Se3)(x) system (x=0, 5, 10, 20, 30, 40, 50, and 60). The chemical composition of fabricated thin films was analyzed via X-ray photoelectron spectroscopy (XPS) and compared to energy dispersive spectroscopy (EDS) data. The results of both techniques agree well: a small deficiency in chalcogen element and an excess of antimony was found. The structure of as-deposited thin films has been investigated by XPS. The presence of the two main structural units, [GeSe4] and [SbSe3] proposed by Raman scattering spectroscopy data analysis, was confirmed by XPS. Moreover, XPS core level spectra analysis revealed the presence of M-M bonds (M=Ge, Sb) in (Ge,Sb)-Ge-(Se)(3) and (Ge,Sb)-Sb-(Se)(2) entities that could correspond to Ge-based tetrahedra and Sb-based pyramids where one of its Se atoms at corners is substituted by Ge or Sb ones. The content of depicted M-M bonds tends to increase with introduction of antimony in the amorphous network of as-deposited thin films from x=0 to x=40 and then it decreases. XPS analysis of as-deposited thin films shows also the presence of the (Ge,Sb)-Se-(Ge,Sb) and Se-Se-(Ge,Sb) entities.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of the American Ceramic Society

ISSN

0002-7820

e-ISSN

—

Svazek periodika

101

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

3347-3356

Kód UT WoS článku

000434278100013

EID výsledku v databázi Scopus

2-s2.0-85043401691