Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F20%3A39916707" target="_blank" >RIV/00216275:25310/20:39916707 - isvavai.cz</a>

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/1361-6595/abb0d0" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6595/abb0d0</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6595/abb0d0" target="_blank" >10.1088/1361-6595/abb0d0</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas

Popis výsledku v původním jazyce

Excited species, reactive neutral species and positive ions, produced during the etching of Ge, Se and GeSe2 targets in inductively coupled plasmas, were identified by means of mass spectrometry (MS) and optical emission spectroscopy. The surface of etched Ge39Se61 thin films were analyzed thanks to in situ x-ray photoelectron spectroscopy (XPS) and compared with those of Ge and Se etched samples. In 100% SF6, the adsorption of fluorine atoms forms SeFx(x=2, 4, 6) and GeFx(x=2, 4) stable and volatile products, generating a surface with few residues as interpreted with in situ XPS. The identification of SSeFx+(x=2, 3, 7) ions confirms that sulfur atoms play a role during the etching of Se-containing materials. A 0D kinetic model predicted the evolution of reactive neutral fluxes, ion fluxes and plasma parameters in SF6/Ar plasmas.

Název v anglickém jazyce

Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas

Popis výsledku anglicky

Excited species, reactive neutral species and positive ions, produced during the etching of Ge, Se and GeSe2 targets in inductively coupled plasmas, were identified by means of mass spectrometry (MS) and optical emission spectroscopy. The surface of etched Ge39Se61 thin films were analyzed thanks to in situ x-ray photoelectron spectroscopy (XPS) and compared with those of Ge and Se etched samples. In 100% SF6, the adsorption of fluorine atoms forms SeFx(x=2, 4, 6) and GeFx(x=2, 4) stable and volatile products, generating a surface with few residues as interpreted with in situ XPS. The identification of SSeFx+(x=2, 3, 7) ions confirms that sulfur atoms play a role during the etching of Se-containing materials. A 0D kinetic model predicted the evolution of reactive neutral fluxes, ion fluxes and plasma parameters in SF6/Ar plasmas.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/GA19-24516S" target="_blank" >GA19-24516S: Chalkogenidové tenké vrstvy dopované ionty vzácných zemin pro detekci plynů ve střední infračervené oblasti spektra</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Plasma Sources Science and Technology

ISSN

0963-0252

e-ISSN

—

Svazek periodika

29

Číslo periodika v rámci svazku

10

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

14

Strana od-do

"105006-1"-"105006-14"

Kód UT WoS článku

000580388600001

EID výsledku v databázi Scopus

2-s2.0-85094942826