Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F21%3A39918123" target="_blank" >RIV/00216275:25310/21:39918123 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2021.149192" target="_blank" >https://doi.org/10.1016/j.apsusc.2021.149192</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2021.149192" target="_blank" >10.1016/j.apsusc.2021.149192</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas

Popis výsledku v původním jazyce

Ge-Sb-Se thin films were etched using an Inductively Coupled Plasma reactor via fluorine-based chemistry. In a SF6 plasma, etch rate and roughness highlight a micro masking effect which originates from the formation of SbF3, (Se)-Sb-F-x and (Sb)-Se-F species. Systematically, a SF6 plasma is associated with a quasi-isotropic profile and a rough surface. In a SF6/Ar plasma, the impact of pressure and the argon content has been investigated. The addition of argon affects directly the fluorine atom flux and the argon atom flux. It was found that there is a strong coherence between the fluorine atom flux, the proportion of fluorine at the surface and the roughness. Surface is free of fluorinated products for a high percentage of argon (95%) and low-pressures (&lt;4mTorr). A smooth surface and a quasi-vertical profile were achieved in a SF6/Ar plasma with a gas mixture ratio 5/95 and at a pressure of 1.5 mTorr.

Název v anglickém jazyce

Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas

Popis výsledku anglicky

Ge-Sb-Se thin films were etched using an Inductively Coupled Plasma reactor via fluorine-based chemistry. In a SF6 plasma, etch rate and roughness highlight a micro masking effect which originates from the formation of SbF3, (Se)-Sb-F-x and (Sb)-Se-F species. Systematically, a SF6 plasma is associated with a quasi-isotropic profile and a rough surface. In a SF6/Ar plasma, the impact of pressure and the argon content has been investigated. The addition of argon affects directly the fluorine atom flux and the argon atom flux. It was found that there is a strong coherence between the fluorine atom flux, the proportion of fluorine at the surface and the roughness. Surface is free of fluorinated products for a high percentage of argon (95%) and low-pressures (&lt;4mTorr). A smooth surface and a quasi-vertical profile were achieved in a SF6/Ar plasma with a gas mixture ratio 5/95 and at a pressure of 1.5 mTorr.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/GA19-24516S" target="_blank" >GA19-24516S: Chalkogenidové tenké vrstvy dopované ionty vzácných zemin pro detekci plynů ve střední infračervené oblasti spektra</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

549

Číslo periodika v rámci svazku

May

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

149192

Kód UT WoS článku

000632428500003

EID výsledku v databázi Scopus

2-s2.0-85101332093