Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F14%3APU111398" target="_blank" >RIV/00216305:26220/14:PU111398 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/ISOT.2014.76" target="_blank" >http://dx.doi.org/10.1109/ISOT.2014.76</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ISOT.2014.76" target="_blank" >10.1109/ISOT.2014.76</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching

Popis výsledku v původním jazyce

The paper describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching and its characterization. The study confirms the possibility of using dry plasma etching processes for wide band gape materials treatment, since the condition of the substrate surface is an important parameter for electronic and optoelectronic devices manufacturing. Processed substrates were studied by interferometry to define the etch depth, and by atomic force microscopy to study the topography and statistical analysis of surface roughness before and after etching. The interferometry reveals the dependence of etch rate on the angle between the substrates and defocused beam of argon ions. It is also shown in low scale image that the surface damage occurs after the substrate treatment. But the common large area surface topography indicates the decreasing of roughness. In order to have purely physical etching the argon plasma was used. Thus this combination of methods allows determine optimal conditions of the substrate preparation.

Název v anglickém jazyce

Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching

Popis výsledku anglicky

The paper describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching and its characterization. The study confirms the possibility of using dry plasma etching processes for wide band gape materials treatment, since the condition of the substrate surface is an important parameter for electronic and optoelectronic devices manufacturing. Processed substrates were studied by interferometry to define the etch depth, and by atomic force microscopy to study the topography and statistical analysis of surface roughness before and after etching. The interferometry reveals the dependence of etch rate on the angle between the substrates and defocused beam of argon ions. It is also shown in low scale image that the surface damage occurs after the substrate treatment. But the common large area surface topography indicates the decreasing of roughness. In order to have purely physical etching the argon plasma was used. Thus this combination of methods allows determine optimal conditions of the substrate preparation.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2014 International Symposium on Optomechatronic Technologies (ISOT 2014)

ISBN

978-1-4799-6666-0

ISSN

1063-6900

e-ISSN

—

Počet stran výsledku

5

Strana od-do

283-287

Název nakladatele

IEEE Computer Society Press

Místo vydání

Los Alamitos, CA, USA

Místo konání akce

Seattle

Datum konání akce

5. 9. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000393497300068