Utilization of As50Se50 thin films in electron beam lithography

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F21%3A39917666" target="_blank" >RIV/00216275:25310/21:39917666 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0254058420314127?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0254058420314127?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.matchemphys.2020.124052" target="_blank" >10.1016/j.matchemphys.2020.124052</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Utilization of As50Se50 thin films in electron beam lithography

Popis výsledku v původním jazyce

Chalcogenide glass of As50Se50 composition have been intensively studied for its interesting physical and chemical properties. Presented manuscript explores the applicability of As50Se50 thermally evaporated thin films in electron beam lithography exploiting wet etching in amine based solution. As50Se50 films proved to be highly sensitive negative resist. Decrease of the etching selectivity with increasing accelerating voltage and its increase with increasing exposure dose were observed. Height irregularities of prepared structures connected with the electron beam scattering and preferential etching of upper edges were observed and thoroughly studied. Comparison of photoinduced chemical resistance changes showed same trends as in case of electron beam induced changes - chemical resistance significantly increased with increasing exposure dosages.

Název v anglickém jazyce

Utilization of As50Se50 thin films in electron beam lithography

Popis výsledku anglicky

Chalcogenide glass of As50Se50 composition have been intensively studied for its interesting physical and chemical properties. Presented manuscript explores the applicability of As50Se50 thermally evaporated thin films in electron beam lithography exploiting wet etching in amine based solution. As50Se50 films proved to be highly sensitive negative resist. Decrease of the etching selectivity with increasing accelerating voltage and its increase with increasing exposure dose were observed. Height irregularities of prepared structures connected with the electron beam scattering and preferential etching of upper edges were observed and thoroughly studied. Comparison of photoinduced chemical resistance changes showed same trends as in case of electron beam induced changes - chemical resistance significantly increased with increasing exposure dosages.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Chemistry and Physics

ISSN

0254-0584

e-ISSN

1879-3312

Svazek periodika

259

Číslo periodika v rámci svazku

February

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

6

Strana od-do

124052

Kód UT WoS článku

000615726500005

EID výsledku v databázi Scopus

2-s2.0-85096417492