Crystal Growth in Amorphous Selenium Thin Films-Reviewed and Revisited: Direct Comparison of Microscopic and Calorimetric Measurements

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F21%3A39918614" target="_blank" >RIV/00216275:25310/21:39918614 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/10.1021/acs.cgd.1c00984" target="_blank" >https://pubs.acs.org/doi/10.1021/acs.cgd.1c00984</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.cgd.1c00984" target="_blank" >10.1021/acs.cgd.1c00984</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Crystal Growth in Amorphous Selenium Thin Films-Reviewed and Revisited: Direct Comparison of Microscopic and Calorimetric Measurements

Popis výsledku v původním jazyce

A newly developed unique combination of direct microscopic and calorimetric measurements was used to study the crystal growth in amorphous selenium (a-Se) thin films (500 nm) deposited on Kapton tape and aluminum foil. The crystal growth rates (u(r)) microscopically determined in the 65-110 degrees C temperature range were similar to those for bulk selenium glass. The crystal growth kinetics was described in terms of the screw dislocation model with implemented temperature dependences of the growth activation energy E-G and Ediger&apos;s decoupling parameter xi. Extensive analysis of the literature data on the crystal growth rates in thin selenium films revealed the dominant effect of the number and distribution of the dangling bonds of the [Se](n) chains adjacent to the film/substrate interface. The seemingly scattered u(r)-T literature data were found to be consistent when the influences of impurities, substrate quality, illumination, and deposition conditions were accounted for. The macroscopic manifestation of the crystal growth in selenium thin films was observed by means of differential scanning calorimetry (DSC)-the corresponding activation energies were similar to the E-G values determined by optical microscopy; the Avrami equation with the implemented u(r) - T dependence was able to accurately describe the macroscopic DSC data. Additional DSC measurements for the selenium thin film scraped off the white glass substrate have shown that the above-T-g annealing of such a material suppresses the crystallization, which can be interpreted as the evidence of the dominant growth from the mechanically activated crystallization centers.

Název v anglickém jazyce

Crystal Growth in Amorphous Selenium Thin Films-Reviewed and Revisited: Direct Comparison of Microscopic and Calorimetric Measurements

Popis výsledku anglicky

A newly developed unique combination of direct microscopic and calorimetric measurements was used to study the crystal growth in amorphous selenium (a-Se) thin films (500 nm) deposited on Kapton tape and aluminum foil. The crystal growth rates (u(r)) microscopically determined in the 65-110 degrees C temperature range were similar to those for bulk selenium glass. The crystal growth kinetics was described in terms of the screw dislocation model with implemented temperature dependences of the growth activation energy E-G and Ediger&apos;s decoupling parameter xi. Extensive analysis of the literature data on the crystal growth rates in thin selenium films revealed the dominant effect of the number and distribution of the dangling bonds of the [Se](n) chains adjacent to the film/substrate interface. The seemingly scattered u(r)-T literature data were found to be consistent when the influences of impurities, substrate quality, illumination, and deposition conditions were accounted for. The macroscopic manifestation of the crystal growth in selenium thin films was observed by means of differential scanning calorimetry (DSC)-the corresponding activation energies were similar to the E-G values determined by optical microscopy; the Avrami equation with the implemented u(r) - T dependence was able to accurately describe the macroscopic DSC data. Additional DSC measurements for the selenium thin film scraped off the white glass substrate have shown that the above-T-g annealing of such a material suppresses the crystallization, which can be interpreted as the evidence of the dominant growth from the mechanically activated crystallization centers.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Crystal Growth and Design

ISSN

1528-7483

e-ISSN

—

Svazek periodika

21

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

7087-7097

Kód UT WoS článku

000750893700046

EID výsledku v databázi Scopus

2-s2.0-85119680648