Native Crystal Growth Revealed by a Joint Microscopy-Calorimetry Technique in (GeS2)0.1(Sb2S3)0.9 Thin Amorphous Films: A Critical Role of Internal Stress and Mechanical Defects
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F24%3A39922019" target="_blank" >RIV/00216275:25310/24:39922019 - isvavai.cz</a>
Výsledek na webu
<a href="https://pubs.acs.org/doi/10.1021/acs.cgd.3c01356" target="_blank" >https://pubs.acs.org/doi/10.1021/acs.cgd.3c01356</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.cgd.3c01356" target="_blank" >10.1021/acs.cgd.3c01356</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Native Crystal Growth Revealed by a Joint Microscopy-Calorimetry Technique in (GeS2)0.1(Sb2S3)0.9 Thin Amorphous Films: A Critical Role of Internal Stress and Mechanical Defects
Popis výsledku v původním jazyce
A novel joint microscopy-calorimetry technique pioneered in the present thin film research was used to investigate the influence of the substrate type on the crystal growth in (GeS2)(0.1)(Sb2S3)(0.9) thin films crystallizing from the free surface. The explored temperature ranges were 205-285 and 210-350 degrees C for microscopy and calorimetry, respectively. Identical temperature dependences of the macroscopic and microscopic crystal growth rates, crystal growth activation energies (decreasing from 333 to 277 kJ<middle dot>mol(-1)), and values of the Ediger's decoupling parameter (decreasing from 0.63 to 0.55) were obtained for as-deposited thin films on Kapton as well as white glass substrates, confirming the negligible influence of the substrate nature. However, both types of as-deposited films exhibited markedly accelerated crystal growth compared to the powdered thin film (scraped-off of the substrate), for which the formation rate of the crystalline phase was practically identical to the native behavior of bulk glass. This unambiguously confirms the marked influence of the crystal-growth-accelerating internal stresses being built up during the heating of the thin film firmly attached to the substrate, where each of the two materials has a different thermal expansion coefficient. The unmatched accuracy and resolution of the joint microscopy-calorimetry approach were demonstrated, with similar subtle intrinsic trends in the crystal growth behavior being recognized by both techniques. Future prospects of the simultaneous in situ polarization microscopy measurements of crystal growth in the as-deposited thin films were introduced and discussed.
Název v anglickém jazyce
Native Crystal Growth Revealed by a Joint Microscopy-Calorimetry Technique in (GeS2)0.1(Sb2S3)0.9 Thin Amorphous Films: A Critical Role of Internal Stress and Mechanical Defects
Popis výsledku anglicky
A novel joint microscopy-calorimetry technique pioneered in the present thin film research was used to investigate the influence of the substrate type on the crystal growth in (GeS2)(0.1)(Sb2S3)(0.9) thin films crystallizing from the free surface. The explored temperature ranges were 205-285 and 210-350 degrees C for microscopy and calorimetry, respectively. Identical temperature dependences of the macroscopic and microscopic crystal growth rates, crystal growth activation energies (decreasing from 333 to 277 kJ<middle dot>mol(-1)), and values of the Ediger's decoupling parameter (decreasing from 0.63 to 0.55) were obtained for as-deposited thin films on Kapton as well as white glass substrates, confirming the negligible influence of the substrate nature. However, both types of as-deposited films exhibited markedly accelerated crystal growth compared to the powdered thin film (scraped-off of the substrate), for which the formation rate of the crystalline phase was practically identical to the native behavior of bulk glass. This unambiguously confirms the marked influence of the crystal-growth-accelerating internal stresses being built up during the heating of the thin film firmly attached to the substrate, where each of the two materials has a different thermal expansion coefficient. The unmatched accuracy and resolution of the joint microscopy-calorimetry approach were demonstrated, with similar subtle intrinsic trends in the crystal growth behavior being recognized by both techniques. Future prospects of the simultaneous in situ polarization microscopy measurements of crystal growth in the as-deposited thin films were introduced and discussed.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
20506 - Coating and films
Návaznosti výsledku
Projekt
<a href="/cs/project/GA23-07574S" target="_blank" >GA23-07574S: Optické vlastnosti amorfních, tepelně a laserem krystalizovaných materiálů na bázi chalkogenidů a jejich optimalizace pro fázově řízenou nanofotoniku</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2024
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Crystal Growth and Design
ISSN
1528-7483
e-ISSN
1528-7505
Svazek periodika
24
Číslo periodika v rámci svazku
4
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
13
Strana od-do
1724-1736
Kód UT WoS článku
001166565200001
EID výsledku v databázi Scopus
2-s2.0-85185589840