Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F22%3A39919344" target="_blank" >RIV/00216275:25310/22:39919344 - isvavai.cz</a>

Výsledek na webu

<a href="https://opg.optica.org/prj/fulltext.cfm?uri=prj-10-9-2261&id=497713" target="_blank" >https://opg.optica.org/prj/fulltext.cfm?uri=prj-10-9-2261&id=497713</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1364/PRJ.460552" target="_blank" >10.1364/PRJ.460552</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films

Popis výsledku v původním jazyce

The kinetics of photoinduced changes, namely, photobleaching and photodarkening in sputtered ternary Ge29Sb8Se63 thin films, was studied. The study of time evolution of the absorption coefficient Delta alpha(t) upon roomtemperature near-bandgap irradiation revealed several types of photoinduced effects. The as-deposited films exhibited a fast photodarkening followed by a dominative photobleaching process. Annealed thin films were found to undergo photodarkening only. The local structure studied by Raman scattering spectroscopy showed significant structural changes upon thermal annealing, which are presumably responsible for a transition from the photobleaching observed in as-deposited and reversible photodarkening in annealed thin films. Moreover, a transient photodarkening process was observed in both as-deposited and annealed thin films. The influence of the initial film thickness and laser optical intensity on the kinetics of photoinduced changes is discussed.

Název v anglickém jazyce

Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films

Popis výsledku anglicky

The kinetics of photoinduced changes, namely, photobleaching and photodarkening in sputtered ternary Ge29Sb8Se63 thin films, was studied. The study of time evolution of the absorption coefficient Delta alpha(t) upon roomtemperature near-bandgap irradiation revealed several types of photoinduced effects. The as-deposited films exhibited a fast photodarkening followed by a dominative photobleaching process. Annealed thin films were found to undergo photodarkening only. The local structure studied by Raman scattering spectroscopy showed significant structural changes upon thermal annealing, which are presumably responsible for a transition from the photobleaching observed in as-deposited and reversible photodarkening in annealed thin films. Moreover, a transient photodarkening process was observed in both as-deposited and annealed thin films. The influence of the initial film thickness and laser optical intensity on the kinetics of photoinduced changes is discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Photonics Research

ISSN

2327-9125

e-ISSN

2327-9125

Svazek periodika

10

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

CN - Čínská lidová republika

Počet stran výsledku

6

Strana od-do

2261-2266

Kód UT WoS článku

000890689600032

EID výsledku v databázi Scopus

2-s2.0-85138431701