Atomic layer deposition and characterization of Bi1Se1 thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F23%3A39920350" target="_blank" >RIV/00216275:25310/23:39920350 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0955221923003035" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0955221923003035</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jeurceramsoc.2023.04.026" target="_blank" >10.1016/j.jeurceramsoc.2023.04.026</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Atomic layer deposition and characterization of Bi1Se1 thin films

Popis výsledku v původním jazyce

Van der Waals (vdWs) heterostructured materials have attracted considerable interest due to their intriguing physical properties. Here, we report on the deposition of BiSe by atomic layer deposition (ALD) using Bi(NMe2)3 and Se(SnMe3)2 as volatile and reactive Bi and Se precursors, respectively. The growth rate varies from 1.5 to 2.0 angstrom/cycle in the deposition temperature range of 90-120 degrees C. Higher deposition temperatures lead to increased grain sizes and enhanced crystallinity of resulting films. Further microstructure characterization reveals the formation of crystalline domains with varying orientations and nanotwinned boundaries. The presence of Bi-Bi zigzag bilayers and the formation of the BiSe phase were confirmed by the existence of the Bi-Bi binding energy peak in the XPS spectra and Raman spectra. Furthermore, the electrical conductivity of BiSe ranged from 1420 to 1520 S/cm due to the ultrahigh carrier concentration (2-3.5 x 1021 cm-3), which is the highest among undoped bismuth selenide-based materials.

Název v anglickém jazyce

Atomic layer deposition and characterization of Bi1Se1 thin films

Popis výsledku anglicky

Van der Waals (vdWs) heterostructured materials have attracted considerable interest due to their intriguing physical properties. Here, we report on the deposition of BiSe by atomic layer deposition (ALD) using Bi(NMe2)3 and Se(SnMe3)2 as volatile and reactive Bi and Se precursors, respectively. The growth rate varies from 1.5 to 2.0 angstrom/cycle in the deposition temperature range of 90-120 degrees C. Higher deposition temperatures lead to increased grain sizes and enhanced crystallinity of resulting films. Further microstructure characterization reveals the formation of crystalline domains with varying orientations and nanotwinned boundaries. The presence of Bi-Bi zigzag bilayers and the formation of the BiSe phase were confirmed by the existence of the Bi-Bi binding energy peak in the XPS spectra and Raman spectra. Furthermore, the electrical conductivity of BiSe ranged from 1420 to 1520 S/cm due to the ultrahigh carrier concentration (2-3.5 x 1021 cm-3), which is the highest among undoped bismuth selenide-based materials.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10401 - Organic chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of the European Ceramic Society

ISSN

0955-2219

e-ISSN

1873-619X

Svazek periodika

43

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

4808-4813

Kód UT WoS článku

001004620000001

EID výsledku v databázi Scopus

2-s2.0-85152640841