New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F24%3A39921830" target="_blank" >RIV/00216275:25310/24:39921830 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/abs/pii/S2468023024001731?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S2468023024001731?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.surfin.2024.104014" target="_blank" >10.1016/j.surfin.2024.104014</a>

Jazyk výsledku

angličtina

Název v původním jazyce

New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition

Popis výsledku v původním jazyce

This study presents the deposition of zirconium oxide (ZrO2) thin films through atomic layer deposition (ALD) using a novel Zr precursor, tris(dimethylamido) dimethylamidoboratabenzene zirconium [eta(6):eta(1)-(C5H5BNMe2)Zr(IV)(NMe2)(3)] and O2 reactant on SiO2/Si substrate in a range of 150-350 degrees C. The successful growth of highly conformal and amorphous ZrO2 films was possible using O2 as a mild oxygen source, which has rarely been found in ZrO2 ALD. This newly proposed process displayed distinct ALD characteristics, including self-limiting film growth and a linear relationship between the number of ALD cycles and film thickness, and exhibited enhanced deposition temperature window and growth per cycle of 0.87 Ang;, which is higher than those using several previously reported Zr precursors. Extremely conformal film growth with complete step coverage on trenches [aspect ratio of similar to 6.3] and uniformity on a 15 cm large SiO2/Si wafer was realized, which is one of the main highlights. Structural studies reveal a predominant amorphous nature of the as-deposited films and transition into nanocrystalline cubic ZrO2 films annealed at 850 degrees C with improved film properties such as stoichiometry, reduced impurities, which is confirmed by Rutherford backscattering spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, elastic recoil detection, and secondary ion mass spectrometry analyses. The optical properties of the prepared films were also examined via ellipsometry analysis.

Název v anglickém jazyce

New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition

Popis výsledku anglicky

This study presents the deposition of zirconium oxide (ZrO2) thin films through atomic layer deposition (ALD) using a novel Zr precursor, tris(dimethylamido) dimethylamidoboratabenzene zirconium [eta(6):eta(1)-(C5H5BNMe2)Zr(IV)(NMe2)(3)] and O2 reactant on SiO2/Si substrate in a range of 150-350 degrees C. The successful growth of highly conformal and amorphous ZrO2 films was possible using O2 as a mild oxygen source, which has rarely been found in ZrO2 ALD. This newly proposed process displayed distinct ALD characteristics, including self-limiting film growth and a linear relationship between the number of ALD cycles and film thickness, and exhibited enhanced deposition temperature window and growth per cycle of 0.87 Ang;, which is higher than those using several previously reported Zr precursors. Extremely conformal film growth with complete step coverage on trenches [aspect ratio of similar to 6.3] and uniformity on a 15 cm large SiO2/Si wafer was realized, which is one of the main highlights. Structural studies reveal a predominant amorphous nature of the as-deposited films and transition into nanocrystalline cubic ZrO2 films annealed at 850 degrees C with improved film properties such as stoichiometry, reduced impurities, which is confirmed by Rutherford backscattering spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, elastic recoil detection, and secondary ion mass spectrometry analyses. The optical properties of the prepared films were also examined via ellipsometry analysis.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20500 - Materials engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surfaces and Interfaces

ISSN

2468-0230

e-ISSN

2468-0230

Svazek periodika

46

Číslo periodika v rámci svazku

March 2024

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

14

Strana od-do

104014

Kód UT WoS článku

001183264500001

EID výsledku v databázi Scopus

2-s2.0-85185157789