Near-surface viscosity and complex crystal growth behavior in Se90Te10 thin films and bulk surface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F24%3A39922223" target="_blank" >RIV/00216275:25310/24:39922223 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0254058424001421?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0254058424001421?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.matchemphys.2024.129018" target="_blank" >10.1016/j.matchemphys.2024.129018</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Near-surface viscosity and complex crystal growth behavior in Se90Te10 thin films and bulk surface

Popis výsledku v původním jazyce

Considering the resurgence of interest in selenium and tellurium -based solar cells and the inter alia related relationship between the device efficiency and post -growth annealing for crystallization, increased attention should be given to the understanding of crystallization process (formation of crystals, crystal positions, and nucleation and crystal growth kinetics). This work summarizes an extensive study of the crystal growth rates and near -surface viscosity at the Se90Te10 bulk surface and in thin films using nanoindentation and measurements of thermal grating decay. The crystal growth in Se90Te10 thin films occurs at two positions - at the thin filmsubstrate interface and the free surface of the thin film. Here, the crystallization of the interface crystals was quantitatively studied using microscopy down to the Tg and below. The influence of different substrates, illumination, and aging on crystal growth rates was tested in the studied thin films to understand the crystal growth properly. Regarding the crystal growth at the bulk surface, the sample size -dependent crystal growth rates were found. The values can be found in the region limited by growth rates of volume crystals (lower limit) and those found in thin films (upper limit). The growth data are combined with the near -surface viscosities measured in bulk samples and thin films to assess a suitable growth model for the description and prediction of the growth data in a wide temperature range.

Název v anglickém jazyce

Near-surface viscosity and complex crystal growth behavior in Se90Te10 thin films and bulk surface

Popis výsledku anglicky

Considering the resurgence of interest in selenium and tellurium -based solar cells and the inter alia related relationship between the device efficiency and post -growth annealing for crystallization, increased attention should be given to the understanding of crystallization process (formation of crystals, crystal positions, and nucleation and crystal growth kinetics). This work summarizes an extensive study of the crystal growth rates and near -surface viscosity at the Se90Te10 bulk surface and in thin films using nanoindentation and measurements of thermal grating decay. The crystal growth in Se90Te10 thin films occurs at two positions - at the thin filmsubstrate interface and the free surface of the thin film. Here, the crystallization of the interface crystals was quantitatively studied using microscopy down to the Tg and below. The influence of different substrates, illumination, and aging on crystal growth rates was tested in the studied thin films to understand the crystal growth properly. Regarding the crystal growth at the bulk surface, the sample size -dependent crystal growth rates were found. The values can be found in the region limited by growth rates of volume crystals (lower limit) and those found in thin films (upper limit). The growth data are combined with the near -surface viscosities measured in bulk samples and thin films to assess a suitable growth model for the description and prediction of the growth data in a wide temperature range.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/GJ20-02183Y" target="_blank" >GJ20-02183Y: Kinetické procesy v chalkogenidových objemových vzorcích a tenkých vrstvách – vztah mezi růstem krystalů, viskozitou a samodifúzí</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Chemistry and Physics

ISSN

0254-0584

e-ISSN

1879-3312

Svazek periodika

316

Číslo periodika v rámci svazku

April 2024

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

13

Strana od-do

129018

Kód UT WoS článku

001198787300001

EID výsledku v databázi Scopus

2-s2.0-85185398229