Comparison of Lateral Crystal Growth in Selenium Thin Films and Surface of Bulk Samples

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F18%3A39913372" target="_blank" >RIV/00216275:25310/18:39913372 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/acs.cgd.8b00505" target="_blank" >http://dx.doi.org/10.1021/acs.cgd.8b00505</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.cgd.8b00505" target="_blank" >10.1021/acs.cgd.8b00505</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Comparison of Lateral Crystal Growth in Selenium Thin Films and Surface of Bulk Samples

Popis výsledku v původním jazyce

Crystal growth in the surface of selenium bulk samples and in selenium thin films of different thicknesses has been studied under isothermal conditions using different microscopy techniques (optical, infrared, and scanning electron microscopy). The structure of the formed crystals is described with respect to previous publications focused on crystal growth in selenium thin films and bulk samples. Crystal growth rates were obtained from the linear dependence of crystal sizes on annealing time. Such behavior assumes that crystal growth is driven by liquid-crystal interface kinetics. The crystal growth rates found in the surface of bulk samples are comparable with those found in thin films and a few orders of magnitude higher than previously published growth rates of volume crystals formed in selenium undercooled melts. The crystal growth rates were scaled with the viscosities to analyze the Stokes-Einstein relation. A relatively high decoupling between the crystal growth rate and viscosity occurs in the studied samples of amorphous selenium. Therefore, the standard screw dislocation growth model is corrected for the decoupling, which provides a satisfactory description of the crystal growth rate over a wide temperature range.

Název v anglickém jazyce

Comparison of Lateral Crystal Growth in Selenium Thin Films and Surface of Bulk Samples

Popis výsledku anglicky

Crystal growth in the surface of selenium bulk samples and in selenium thin films of different thicknesses has been studied under isothermal conditions using different microscopy techniques (optical, infrared, and scanning electron microscopy). The structure of the formed crystals is described with respect to previous publications focused on crystal growth in selenium thin films and bulk samples. Crystal growth rates were obtained from the linear dependence of crystal sizes on annealing time. Such behavior assumes that crystal growth is driven by liquid-crystal interface kinetics. The crystal growth rates found in the surface of bulk samples are comparable with those found in thin films and a few orders of magnitude higher than previously published growth rates of volume crystals formed in selenium undercooled melts. The crystal growth rates were scaled with the viscosities to analyze the Stokes-Einstein relation. A relatively high decoupling between the crystal growth rate and viscosity occurs in the studied samples of amorphous selenium. Therefore, the standard screw dislocation growth model is corrected for the decoupling, which provides a satisfactory description of the crystal growth rate over a wide temperature range.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Crystal Growth &amp; Design

ISSN

1528-7483

e-ISSN

—

Svazek periodika

18

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

4103-4110

Kód UT WoS článku

000438007200048

EID výsledku v databázi Scopus

2-s2.0-85048710354