Low Temperature Atomic Layer Deposition of (00l)-Oriented Elemental Bismuth

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F25%3A39923150" target="_blank" >RIV/00216275:25310/25:39923150 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1002/anie.202422578" target="_blank" >https://doi.org/10.1002/anie.202422578</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/anie.202422578" target="_blank" >10.1002/anie.202422578</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Low Temperature Atomic Layer Deposition of (00l)-Oriented Elemental Bismuth

Popis výsledku v původním jazyce

This study presents the first successful demonstration of growing elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe2)3 as the precursor and Sb(SiMe3)3 as the co-reactant. The films were deposited at a relatively low temperature of 100 degrees C, with a growth per cycle (GPC) of 0.31-0.34 &amp; Aring;/cycle. Island formation marked the initial growth stages, with surface coverage reaching around 80 % after 1000 cycles and full coverage between 2000 and 2500 cycles. Morphological analysis revealed that the Bi grains expanded and became more defined as the number of ALD cycles increased. This coalescence is further supported by X-ray diffraction (XRD) patterns, which show a preferential shift in growth orientation from the (012) plane to the (003) plane as the film thickness increases. X-ray photoemission spectroscopy (XPS) confirmed the presence of metallic Bi with minimal surface oxidation. Temperature-dependent sheet resistance measurements highlight the semimetallic nature of Bi, with a room temperature resistivity of approximate to 200 mu Omega cm for the 2500 cycles Bi. Temperature-dependent sheet resistance was also associated with a transition in carrier-type dominance from holes at higher temperatures to electrones at lower temperatures.

Název v anglickém jazyce

Low Temperature Atomic Layer Deposition of (00l)-Oriented Elemental Bismuth

Popis výsledku anglicky

This study presents the first successful demonstration of growing elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe2)3 as the precursor and Sb(SiMe3)3 as the co-reactant. The films were deposited at a relatively low temperature of 100 degrees C, with a growth per cycle (GPC) of 0.31-0.34 &amp; Aring;/cycle. Island formation marked the initial growth stages, with surface coverage reaching around 80 % after 1000 cycles and full coverage between 2000 and 2500 cycles. Morphological analysis revealed that the Bi grains expanded and became more defined as the number of ALD cycles increased. This coalescence is further supported by X-ray diffraction (XRD) patterns, which show a preferential shift in growth orientation from the (012) plane to the (003) plane as the film thickness increases. X-ray photoemission spectroscopy (XPS) confirmed the presence of metallic Bi with minimal surface oxidation. Temperature-dependent sheet resistance measurements highlight the semimetallic nature of Bi, with a room temperature resistivity of approximate to 200 mu Omega cm for the 2500 cycles Bi. Temperature-dependent sheet resistance was also associated with a transition in carrier-type dominance from holes at higher temperatures to electrones at lower temperatures.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Angewandte Chemie (International Edition)

ISSN

1433-7851

e-ISSN

1521-3773

Svazek periodika

64

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

14

Strana od-do

"e202422578"

Kód UT WoS článku

001420643100001

EID výsledku v databázi Scopus

2-s2.0-105002179181