Electron sensitivity, photosensitivity and thermoplasticity of copper-doped Ge25Se75 thin films prepared via spin-coating

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F25%3A39923188" target="_blank" >RIV/00216275:25310/25:39923188 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/25:10508644

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2025.163848" target="_blank" >https://doi.org/10.1016/j.apsusc.2025.163848</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2025.163848" target="_blank" >10.1016/j.apsusc.2025.163848</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electron sensitivity, photosensitivity and thermoplasticity of copper-doped Ge25Se75 thin films prepared via spin-coating

Popis výsledku v původním jazyce

Copper-doped Ge25Se75 thin films were deposited via spin-coating using anhydrous copper(I) or copper(II) chloride precursors to examine the effects of Cu oxidation states on film properties. The solution processing offered a cost-effective route with a mass production potential of perspective Cu-doped chalcogenide materials. The Energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) techniques confirmed the Cu incorporation at its targeted concentration (5 at.%). The XPS also revealed a reduction of Cu2+ to Cu+ oxidation form, presumably already in the solution phase. Optical characterisation revealed a redshift in the bandgap due to Cu-Se bond formation while annealing at 210 degrees C led to partial crystallisation, forming CuGeSex-like phases. The combination of wet etching with electron beam lithography and optical holography showed a significant increase in the stability of copper-doped material. Similarly, the thermoplasticity of copper-doped samples was affected as the hot embossing temperature dramatically shifted towards higher temperatures. However, despite having the same Cu+ oxidation state, the selected copper precursor still significantly influenced the majority of studied phenomena. These findings prove that Cu doping in the solution phase modifies the optical, mechanical and potentially electrical properties of Ge25Se75 thin films, making them viable for resistive memory or high-temperature photonic applications.

Název v anglickém jazyce

Electron sensitivity, photosensitivity and thermoplasticity of copper-doped Ge25Se75 thin films prepared via spin-coating

Popis výsledku anglicky

Copper-doped Ge25Se75 thin films were deposited via spin-coating using anhydrous copper(I) or copper(II) chloride precursors to examine the effects of Cu oxidation states on film properties. The solution processing offered a cost-effective route with a mass production potential of perspective Cu-doped chalcogenide materials. The Energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) techniques confirmed the Cu incorporation at its targeted concentration (5 at.%). The XPS also revealed a reduction of Cu2+ to Cu+ oxidation form, presumably already in the solution phase. Optical characterisation revealed a redshift in the bandgap due to Cu-Se bond formation while annealing at 210 degrees C led to partial crystallisation, forming CuGeSex-like phases. The combination of wet etching with electron beam lithography and optical holography showed a significant increase in the stability of copper-doped material. Similarly, the thermoplasticity of copper-doped samples was affected as the hot embossing temperature dramatically shifted towards higher temperatures. However, despite having the same Cu+ oxidation state, the selected copper precursor still significantly influenced the majority of studied phenomena. These findings prove that Cu doping in the solution phase modifies the optical, mechanical and potentially electrical properties of Ge25Se75 thin films, making them viable for resistive memory or high-temperature photonic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/EH22_008%2F0004591" target="_blank" >EH22_008/0004591: Feroické multifunkcionality</a><br>

Návaznosti

—

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

709

Číslo periodika v rámci svazku

November 2025

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

13

Strana od-do

163848

Kód UT WoS článku

001520603800001

EID výsledku v databázi Scopus

2-s2.0-105008500477