Influence of Argon Deposition Pressure on the Mid-Infrared Luminescence of Dysprosium-Doped Ga-Ge-Sb-Se Waveguides Deposited on Different Substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F25%3A39923224" target="_blank" >RIV/00216275:25310/25:39923224 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1021/acsaom.5c00306" target="_blank" >https://doi.org/10.1021/acsaom.5c00306</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsaom.5c00306" target="_blank" >10.1021/acsaom.5c00306</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of Argon Deposition Pressure on the Mid-Infrared Luminescence of Dysprosium-Doped Ga-Ge-Sb-Se Waveguides Deposited on Different Substrates

Popis výsledku v původním jazyce

Radiofrequency (RF) magnetron sputtering is used to deposit 5000 ppmw Dy3+-doped selenide thin films on SiO2 or undoped sulfide confinement layers on silicon substrates. Then, photolithography and dry etching techniques are implemented to fabricate rare-earth-doped selenide ridge waveguides. The investigation was focused on the influence of argon deposition pressure on amorphous chalcogenide thin films&apos; properties with special attention to luminescence. Fluorescence in short-wave and midwave infrared spectral ranges is recorded using optical excitation at 1.32 mu m. The argon pressure of 1 x 10-2 mbar gives the highest and clearest signal in the midwave infrared region. At 4.38 mu m, single-mode optical propagation is efficiently observed in 5000 ppmw Dy3+-doped Ga5Ge20Sb10Se65 waveguides deposited on an undoped sulfide confinement layer on the silicon substrate.

Název v anglickém jazyce

Influence of Argon Deposition Pressure on the Mid-Infrared Luminescence of Dysprosium-Doped Ga-Ge-Sb-Se Waveguides Deposited on Different Substrates

Popis výsledku anglicky

Radiofrequency (RF) magnetron sputtering is used to deposit 5000 ppmw Dy3+-doped selenide thin films on SiO2 or undoped sulfide confinement layers on silicon substrates. Then, photolithography and dry etching techniques are implemented to fabricate rare-earth-doped selenide ridge waveguides. The investigation was focused on the influence of argon deposition pressure on amorphous chalcogenide thin films&apos; properties with special attention to luminescence. Fluorescence in short-wave and midwave infrared spectral ranges is recorded using optical excitation at 1.32 mu m. The argon pressure of 1 x 10-2 mbar gives the highest and clearest signal in the midwave infrared region. At 4.38 mu m, single-mode optical propagation is efficiently observed in 5000 ppmw Dy3+-doped Ga5Ge20Sb10Se65 waveguides deposited on an undoped sulfide confinement layer on the silicon substrate.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

20500 - Materials engineering

Projekt

<a href="/cs/project/GA22-05179S" target="_blank" >GA22-05179S: Infračervená fotonika pro chemické senzory: Materiálová strategie založená na amorfních chalkogenidech</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Optical Materials

ISSN

2771-9855

e-ISSN

2771-9855

Svazek periodika

3

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

2555-2565

Kód UT WoS článku

001605923400001

EID výsledku v databázi Scopus

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