Automatic test-bench for SiC power devices using LabVIEW

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25510%2F24%3A39922705" target="_blank" >RIV/00216275:25510/24:39922705 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26220/24:PU151233

Výsledek na webu

<a href="https://sciendo.com/article/10.2478/jee-2024-0011" target="_blank" >https://sciendo.com/article/10.2478/jee-2024-0011</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2478/jee-2024-0011" target="_blank" >10.2478/jee-2024-0011</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Automatic test-bench for SiC power devices using LabVIEW

Popis výsledku v původním jazyce

This paper is devoted to the improvement existing models of electronics devices, which are used in powers electronics as switching devices, and investigate a LabVIEW-based automatic test-bench for Silicon carbide (SiC) power devices. In recent years, power electronic devices are required to be capable handle with higher voltage, leads to development of new generation of power electronic devices, such as SiC devices. However, using a simulation platform, such as Spice, to diminish the complexity of power electronic design with these new devices is hindered by the lack of precise models. The proposed test-bench enables not only measuring static characteristics of SiC power devices, but also extracting key parameters required by simulations. These extracted parameters are then employed in the existing device model, and the simulation results which are based on the model with original parameters and models with extracted parameters are compared with measured results. The comparison clearly demonstrates that parameters obtained from the proposed test-bench significantly enhance the Spice model.

Název v anglickém jazyce

Automatic test-bench for SiC power devices using LabVIEW

Popis výsledku anglicky

This paper is devoted to the improvement existing models of electronics devices, which are used in powers electronics as switching devices, and investigate a LabVIEW-based automatic test-bench for Silicon carbide (SiC) power devices. In recent years, power electronic devices are required to be capable handle with higher voltage, leads to development of new generation of power electronic devices, such as SiC devices. However, using a simulation platform, such as Spice, to diminish the complexity of power electronic design with these new devices is hindered by the lack of precise models. The proposed test-bench enables not only measuring static characteristics of SiC power devices, but also extracting key parameters required by simulations. These extracted parameters are then employed in the existing device model, and the simulation results which are based on the model with original parameters and models with extracted parameters are compared with measured results. The comparison clearly demonstrates that parameters obtained from the proposed test-bench significantly enhance the Spice model.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electrical Engineering

ISSN

1335-3632

e-ISSN

1339-309X

Svazek periodika

75

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

SK - Slovenská republika

Počet stran výsledku

9

Strana od-do

77-85

Kód UT WoS článku

001197533000003

EID výsledku v databázi Scopus

2-s2.0-85190495758