Accurate diode behavioral model with reverse recovery

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00316663" target="_blank" >RIV/68407700:21230/18:00316663 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0038110117304872" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0038110117304872</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.sse.2017.10.034" target="_blank" >10.1016/j.sse.2017.10.034</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Accurate diode behavioral model with reverse recovery

Popis výsledku v původním jazyce

This paper deals with the comprehensive behavioral model of p-n junction diode containing reverse recovery effect, applicable to all standard SPICE simulators supporting Verilog-A language. The model has been successfully used in several production designs, which require its full complexity, robustness and set of tuning parameters comparable with standard compact SPICE diode model. The model is like standard compact model scalable with area and temperature and can be used as a stand-alone diode or as a part of more complex device macro-model, e.g. LDMOS, JFET, bipolar transistor. The paper briefly presents the state of the art followed by the chapter describing the model development and achieved solutions. During precise model verification some of them were found non-robust or poorly converging and replaced by more robust solutions, demonstrated in the paper. The measurement results of different technologies and different devices compared with a simulation using the new behavioral model are presented as the model validation. The comparison of model validation in time and frequency domains demonstrates that the implemented reverse recovery effect with correctly extracted parameters improves the model simulation results not only in switching from ON to OFF state, which is often published, but also its impedance/admittance frequency dependency in GHz range. Finally the model parameter extraction and the comparison with SPICE compact models containing reverse recovery effect is presented.

Název v anglickém jazyce

Accurate diode behavioral model with reverse recovery

Popis výsledku anglicky

This paper deals with the comprehensive behavioral model of p-n junction diode containing reverse recovery effect, applicable to all standard SPICE simulators supporting Verilog-A language. The model has been successfully used in several production designs, which require its full complexity, robustness and set of tuning parameters comparable with standard compact SPICE diode model. The model is like standard compact model scalable with area and temperature and can be used as a stand-alone diode or as a part of more complex device macro-model, e.g. LDMOS, JFET, bipolar transistor. The paper briefly presents the state of the art followed by the chapter describing the model development and achieved solutions. During precise model verification some of them were found non-robust or poorly converging and replaced by more robust solutions, demonstrated in the paper. The measurement results of different technologies and different devices compared with a simulation using the new behavioral model are presented as the model validation. The comparison of model validation in time and frequency domains demonstrates that the implemented reverse recovery effect with correctly extracted parameters improves the model simulation results not only in switching from ON to OFF state, which is often published, but also its impedance/admittance frequency dependency in GHz range. Finally the model parameter extraction and the comparison with SPICE compact models containing reverse recovery effect is presented.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/TE01020186" target="_blank" >TE01020186: Centrum integrovaných družicových a pozemských navigačních technologií</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solid-State Electronics

ISSN

0038-1101

e-ISSN

1879-2405

Svazek periodika

139

Číslo periodika v rámci svazku

January

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

31-38

Kód UT WoS článku

000417283000005

EID výsledku v databázi Scopus

2-s2.0-85031504240