Practical Aspects of Realisation of Negative Charge Pumps

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25530%2F17%3A39911483" target="_blank" >RIV/00216275:25530/17:39911483 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.23919/AE.2017.8053596" target="_blank" >http://dx.doi.org/10.23919/AE.2017.8053596</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.23919/AE.2017.8053596" target="_blank" >10.23919/AE.2017.8053596</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Practical Aspects of Realisation of Negative Charge Pumps

Popis výsledku v původním jazyce

A charge pump is DC/DC converter that produces a higher output voltage than power supply or generates a negative output voltage. Some variants of charge pumps work as voltage regulator, too. A charge pump is realised by capacitors, transistors and/or diodes. Therefore, some charge pumps are integrated directly to the systems that use these charge pumps. E.g. Flash or EEPROM memories are supplied from standard voltage about 3 V, but write and erase processes use a greater voltage about 12 V. This paper is concentrated on comparison of standard variant of negative charge pump with a new design. Thus, the output voltage, rise time and other parameters of these negative charge pumps are compared by simulation executed by LTspice XVII. The simulated results are verified by practical realization of charge pumps in discrete form.

Název v anglickém jazyce

Practical Aspects of Realisation of Negative Charge Pumps

Popis výsledku anglicky

A charge pump is DC/DC converter that produces a higher output voltage than power supply or generates a negative output voltage. Some variants of charge pumps work as voltage regulator, too. A charge pump is realised by capacitors, transistors and/or diodes. Therefore, some charge pumps are integrated directly to the systems that use these charge pumps. E.g. Flash or EEPROM memories are supplied from standard voltage about 3 V, but write and erase processes use a greater voltage about 12 V. This paper is concentrated on comparison of standard variant of negative charge pump with a new design. Thus, the output voltage, rise time and other parameters of these negative charge pumps are compared by simulation executed by LTspice XVII. The simulated results are verified by practical realization of charge pumps in discrete form.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

International Conference on Applied Electronics

ISBN

978-80-261-0641-8

ISSN

1803-7232

e-ISSN

neuvedeno

Počet stran výsledku

4

Strana od-do

115-118

Název nakladatele

IEEE (Institute of Electrical and Electronics Engineers)

Místo vydání

New York

Místo konání akce

Plzeň

Datum konání akce

5. 9. 2017

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

000427091900024