New Variant of a Negative 4-phase Charge Pump

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00325275" target="_blank" >RIV/68407700:21230/18:00325275 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

New Variant of a Negative 4-phase Charge Pump

Popis výsledku v původním jazyce

Charge pump (CP) is a micropower alternative to conventional DC/DC converters. CPs have a small size and an easier integrability than conventional DC/DC converters. Nowadays, CPs became an integral part of low-voltage integrated circuits that contain some blocks with specific voltages. An example is non-volatile memories (Flash) that use programming voltage a greater than 10 V, but these circuits use power supply voltage about 1 V. Thus, these systems must integrate a positive CP that increases power supply voltage to an appropriate programming voltage. Required voltage gain of a CP can be decreased with a usage of modified programming scheme [1] that is based on negative bias. This paper is concentrated on a new concept of negative CP and comparison of this new concept with standard Dickson Charge Pump (DCP). The key parameters as voltage gain, rise time, number of elements, chip area and efficiency are compared by simulations executed by Mentor Graphics.

Název v anglickém jazyce

New Variant of a Negative 4-phase Charge Pump

Popis výsledku anglicky

Charge pump (CP) is a micropower alternative to conventional DC/DC converters. CPs have a small size and an easier integrability than conventional DC/DC converters. Nowadays, CPs became an integral part of low-voltage integrated circuits that contain some blocks with specific voltages. An example is non-volatile memories (Flash) that use programming voltage a greater than 10 V, but these circuits use power supply voltage about 1 V. Thus, these systems must integrate a positive CP that increases power supply voltage to an appropriate programming voltage. Required voltage gain of a CP can be decreased with a usage of modified programming scheme [1] that is based on negative bias. This paper is concentrated on a new concept of negative CP and comparison of this new concept with standard Dickson Charge Pump (DCP). The key parameters as voltage gain, rise time, number of elements, chip area and efficiency are compared by simulations executed by Mentor Graphics.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. of 2018 IEEE 21st International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)

ISBN

978-1-5386-5755-3

ISSN

—

e-ISSN

2473-2117

Počet stran výsledku

300

Strana od-do

—

Název nakladatele

IEEE

Místo vydání

Piscataway, NJ

Místo konání akce

Budapest

Datum konání akce

25. 4. 2018

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—